Schlagwort: IEEE

Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI

Electron Device Letters
>10.1109/LED.2025.3549531

Ferroelectric materials and their applications for next-generation integrated devices

International Electron Devices Meeting
>10.1109/IEDM50854.2024.10873588

Charge trapping and endurance degradation in ferroelectric field-effect transistors

Non-Volatile Memory Technology Symposium
>10.1109/IEEECONF63530.2024.10830836

Small-Signal Characterization and Modelling of a Back Bias Reconfigurable Field Effect Transistor

 IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719561

Speeding-Up Emerging Device Development Cycles by Generating Models via Machine-Learning directly from Electrical Measurements

IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719591

Understanding the impact of the dielectric layer in modulating the TER of FTJ devices

 IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719445

Reliability of Reconfigurable Field Effect Transistors: Early Analysis of Bias Temperature Instability

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
>10.1109/IPFA61654.2024.10691045

HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C

Symposium on VLSI Technology and Circuits
>10.1109/vlsitechnologyandcir46783.2024.10631328

On the thickness scaling of ferroelectric hafnia

IEEE Transactions on Materials for Electron Devices
>10.1109/TMAT.2024.3423665

Coincidence Detection with an Analog Spiking Neuron Exploiting Ferroelectric Polarization

 International Symposium on Circuits and Systems
>10.1109/ISCAS58744.2024.10558196

Dynamic Reconfigurable Security Cells Based on Emerging Devices Integrable in FDSOI Technology

Design, Automation and Test in Europe Conference and Exhibition
>10.23919/DATE58400.2024.10546894

Charge trapping challenges of CMOS embedded complementary FeFETs

International Memory Workshop
>10.1109/IMW59701.2024.10536957

Ferroelectric HfO2-based Capacitors for FeRAM

International Reliability Physics Symposium
>10.1109/IRPS48228.2024.10529299

Understanding the Substrate Effect on De-embedding Structures Fabricated on SOI Wafers Using Electromagnetic Simulation

International Conference on Microelectronic Test Structures
>10.1109/ICMTS59902.2024.10520694

Analysis and Compensation of the Series Resistance Effects on the Characteristics of Ferroelectric Capacitors

International Conference on Microelectronic Test Structures
>10.1109/ICMTS59902.2024.10520684

Voltage Programmable Pyroelectric Sensors With ZrO₂-Based Antiferroelectrics

IEEE Sensors Journal
>10.1109/JSEN.2024.3368772

Machine Learning-Based Compact Model Design for Reconfigurable FETs

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2024.3386113

The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors

IEEE Electron Device Letters
>10.1109/LED.2023.3347397

Degradation of Nonhysteretic Switching in HZO–Al2O3 Stacks Due to Positive Unipolar Stress

IEEE Transactions on Electron Devices
>10.1109/TED.2023.3344409

Generating Predictive Models for Emerging Semiconductor Devices

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2023.3347306

Generating Predictive Models for Emerging Semiconductor Devices

 Journal of the Electron Devices Society
> 10.1109/JEDS.2023.3347306

Dielectric Confined Nickel-Titanium Germano-Silicide Junctions to SiGe Nanochannels

Nanotechnology Materials and Devices Conference
> 10.1109/NMDC57951.2023.10343960

Formal Analysis of Camouflaged Reconfigurable Circuits

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198196

Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198128

A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation

IEEE Transactions on Nanotechnology
>10.1109/TNANO.2022.3221836