Public Funded Projects

KaSiLi

In-situ Raman investigations on protective anodic layers of silicon- and lithium-based anode materials (in cooperation with 3 German partners, finished)

Nitrides 4-6G

Nitride-based dispersion-lean and efficient millimeter wave devices for future radiation-hard satellite communication technology (in cooperation with 6 German partners)

KI-IoT

Holistische Open-Source-platform for embedded system-on-chip (in cooperation with 6 German partners)

CirroStrato

Novel reconfigurable transistors for know-how protection of electronic components (in cooperation with 4 German partners)

GaNESIS

AIN/GaN epitaxy on silicon using reactive plus magnetron sputtering (in cooperation with 6 German partners)

Falcon

Flash lamp based activation of passivating contacts for highly efficient solar cells (in cooperation with 1 German partner, finished)

EcselAll2GaN

Affordable smart GaN IC solutions as enabler of greener applications (in cooperation with 10 European partners) https://www.all2gan.eu/home

EcselUltimateGaN

Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap (in cooperation with 26 partners from 9 countries, started May 2019) www.ultimategan.eu

Memriness

Memristive Neurons and Synapses for Neuromorphic Edge Computing, finished)

Crossbrain

Distributed and federated cross-modality actuation through advanced nanomaterials an neumorphic learning (in cooperation with 7 partners from 4 countries)

FvllMonti

Ferroelectric Vertical Low energy Low latency low volume Modules fOr Neural network Transformers In 3D (in cooperation with 5 European partners)

BeNewFerroSynaptic

BEOL technology platform based on ferroelectric synaptic devices for advanced neuromorphic processors (in cooperation with 13 partners from 5 european countries) https://www.beferrosynaptic.eu

3eFerro

Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr) O2 (in cooperation with 8 partners from 5 countries, finished)

Sensoteric

Smart Sensor Analog Front-End powered by Emerging Reconfigurable Devices (in cooperation with 6 partners from 4 countries)

FIXIT

Scaled FerroelectrIc X-bars for AI-driven sensors and actuaTors (in cooperation with 7 partners from 4 countries)

Ferro4Edge Al

Scalabale, ferroelectric based accelerators for energy efficient edge AI (in cooperation with 6 partners from 5 countries)

FreiGaN

Development of free-standing GaN wafers with improved homogeneous properties (in cooperation with 1 German partner, finished)

GaNHOCH – VTF

Equipment GaN on GaN high voltage and high frequency transistors development (finished)

F-GaN

Development of a reliable and robust foundry process technology for GaN devices based on 200 mm epitaxial GaN on silicon wafers (in cooperation with 1 German partner, finished)

EFFSIL300

Efficient and safe power transistors based on 300 mm wafers (in cooperation with 6 German partners, finished)

D3PO

Dopant and Defect Physics for Device Opitimization for Hafnium Oxide based Devices (in cooperation with 1 German and 1 French partner)

PARFAIT II

Power-aware AmbipolaR Fpga ArchITecture II (in cooperation with 2 German partners)

FeDiBiS

Polarization Switching Kinetics in Ferroelectric/Dielectric Bi-Layer Structures (in cooperation with one German partner)

Homer

Ferroelectric Hafnium Oxide Material Enhanced Reliability (in cooperation with one Russian partner)

MADSINano

Modulation-Acceptor Doping of SiO₂ as Novel Doping Method for Silicon Nanowires (in cooperation with one German partner)

SecuReFET

Secure circuits through inherent reconfigurable FET (in cooperation with 1 German partner)

SOGraphMEM

SOGraphMEM; Spin Orbit functionalized GRAPHene for resistive-magnetic MEMories (in cooperation with 6 European partners)

Zeppelin

Ferroelectric zirconium oxide for piezo- and pyroelectric devices (in cooperation with 2 German partners)

BioMCross

Bio inspired Memcomputing via Crossbar Structures (in cooperation with 2 German partners)

ReLoFeMris

Reconfigurable logic and multi-bit in-memory processing with ferroelectric memristors (in cooperation with one German partner)

WUMM

Wurtzite Solid Solutions as a New Material Class for Ferroelectric Microelectronics (in cooperation with 1 German partner)

HiMGaN

Exploration of novel electrical and electro-optical device concepts and fundamental physical effects in high-quality wide-band-gap semiconductor hetero structures (in cooperation with 1 Russian partner, finished)

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TemCrysT

GaN templates and manufactured GaN crystals and GaN wafers produced for the development of vertical GaN transistors

Leistungsschalter

Power transistors as a switch set (in cooperation with 2 German partners)