NaMLab – nanoelectronic materials laboratory
NaMLab was founded in 2006 as a university-industry joint venture and is now a TU Dresden company. Based on key expertise in dielectric materials for semiconductor devices, NaMLab focuses on the integration and application of its materials expertise applied to reconfigurable and energy efficiency devices by placing the device rather than the material system itself into the center of its research activities.
How to fabricate a capacitor in the NaMLab cleanroom
News
- Tim Boescke wins 2023 IEEE Kiyo Tomiyasu AwardNaMLab likes to congratulate Tim Boescke for winning the 2023 IEEE Kiyo Tomiyasu Award, for outstanding early to mid-career contributions […]
- NaMLab researcher wins ERC Starting GrantDer Europäischer Forschungsrat unterstützt mit einem ERC – Forschungsstipendium ein zukunftsweisende Forschungsprojekte am NaMLab / The European Research Council supports […]
- NaMLab @ IEEE IEDM 2021The 67th Annual IEEE International Electron Devices Meeting is going on in San Francisco in these days (11-15 December 2021) […]
Publications
- Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)
2022 IEEE International Conference on Flexible and Printable Sensors and Systems
>10.1109/FLEPS53764.2022.9781597 - Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures
Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126788 - Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2
IEEE Electron Device Letters
>10.1109/LED.2022.3189159
Events
- High k Workshop 2022 On-site eventThe High k Workshop at Namlab workshop is now open for registration. Please use the following link to register*: https://en.xing-events.com/LKKYWNO […]
- High k Workshop 2022 virtual eventDue to the current situation, the ‚Novel High k Application Workshop‘ at Namlab is planned as a combination of: a […]
- High k Workshop 2021 – virtual seminar seriesThis year, we celebrate 15 years of the discovery of ferroelectricity in doped HfO2 films and the tenth anniversary of […]