The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals and conference proceedings in the past months. The digital object identifiers (DOI) and links to the papers are given below:
Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)
2022 IEEE International Conference on Flexible and Printable Sensors and Systems
>10.1109/FLEPS53764.2022.9781597
Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures
Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126788
Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2
IEEE Electron Device Letters
>10.1109/LED.2022.3189159
Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films
ACS Applied Electronic Materials
>10.1021/acsaelm.2c00608
Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs
Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126673
Reliability Study of 1T1C FeRAM Arrays with Hf0.5Zr0.5O2 Thickness Scaling
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3187101
Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI
IEEE Transactions on Device and Materials Reliability
>10.1109/TDMR.2022.3183630
Ferroelectric-based synapses and neurons for neuromorphic computing
Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4918
Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates
IEEE Embedded Systems Letters
>10.1109/LES.2022.3144010
2022 roadmap on neuromorphic computing and engineering
Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4a83
Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films
Physica Status Solidi Rapid Research Letters
>10.1002/pssr.202100589
A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
Applied Physics Letters
>10.1063/5.0078106
Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence
IEEE IEDM 2021
>https://infoscience.epfl.ch/record/289768
Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology
2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
>10.1109/EuroSOI-ULIS53016.2021.9560180
Flash-Lamp Enabled Atomic Layer Deposition of Titanium Oxide
240th ECS Meeting
>bit.ly/3G5QuEN
Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks
Semiconductor Science and Technology
>10.1088/1361-6641/ac1827
The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films
Journal of Science: Advanced Materials and Devices
>10.1016/j.jsamd.2021.08.001
Back-Bias Reconfigurable Field Effect Transistor: A Flexible Add-On Functionality for 22 nm FDSOI
2021 Silicon Nanoelectronics Workshop (SNW)
>10.1109/SNW51795.2021.00005
20 Years of reconfigurable field-effect transistors: From concepts to future applications
Solid-State Electronics
>10.1016/j.sse.2021.108036
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
IEEE Transactions on Electron Devices
>10.1109/TED.2021.3081527
Ferroelectric Tunneling Junctions for Edge Computing
2021 IEEE International Symposium on Circuits and Systems (ISCAS)
>10.1109/ISCAS51556.2021.9401800
Adaptive Extreme Edge Computing for Wearable Devices
Frontiers in Neuroscience
>10.3389/fnins.2021.611300
Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors
2021 IEEE Latin America Electron Devices Conference (LAEDC)
>10.1109/LAEDC51812.2021.9437954
Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs
IEEE Transactions on Nanotechnology
>10.1109/TNANO.2021.3080455
Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices
ACS Applied Nano Materials
>10.1021/acsanm.0c03072
Reconfigurable thin-film transistors based on a parallel array of Si-nanowires
Journal of Applied Physics
>10.1063/5.0036029
The Role of Balancing Nanostructured Silicon Anodes and NMC Cathodes in Lithium-Ion Full-Cells with High Volumetric Energy Density
Journal of The Electrochemical Society
>10.1149/1945-7111/ab68d7
Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films
Nano Energy
>10.1016/j.nanoen.2020.104733
Memory Technology – A Primer for Material Scientists
Reports on Progress in Physics
>10.1088/1361-6633/ab8f86
Review of Defect Chemistry in Fluorite-structure Ferroelectrics for future electronic devices
Journal of Materials Chemistry C
>10.1039/D0TC01695K
Analysis of Energy-Delay-Product for a 3D Vertical Nanowire FET Technology for Logic Applications
Size effect of electronic properties in highly arsenic-doped silicon nanowires
Solid-State Electronics
>10.1016/j.sse.2019.107724
A Silicon Nanowire Ferroelectric Field-Effect Transistor
Advanced Electronic Materials
>10.1002/aelm.201901244
Switching in Nanoscale Hafnium Oxide-Based Ferroelectric Transistors
Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131
FeFETs for Neuromorphic Systems
Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131.
>10.1007/978-981-15-1212-4_20
Surface related differences between uncoated versus carbon-coated silicon nanowire electrodes on performance in lithium ion batteries
Journal of Energy Storage
>10.1016/j.est.2019.101052
Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
Journal of Applied Physics
>10.1063/1.5128502
Hf xZr 1-xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison
Journal of Vacuum Science & Technology A
>10.1116/1.5134135
The Past, the Present, and the Future of Ferroelectric Memories
IEEE Transactions on Electron Devices
>10.1109/TED.2020.2976148
Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures
Semiconductor Science and Technology
>10.1088/1361-6641/ab8755
Scalable fabrication of gold nanoparticles with adjustable size distribution as catalytic nuclei for the CVD growth of silicon nanowires
Applied Surface Science
>10.1016/j.apsusc.2019.144203
Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States
IEEE Electron Device Letters
> 10.1109/LED.2020.2997319
Reconfigurable frequency multiplication with a ferroelectric transistor
Nature Electronics
> 10.1038/s41928-020-0413-0
Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers
Solar Energy Materials and Solar Cells
> 10.1016/j.solmat.2020.110651
Quantitative Characterization of Reconfigurable Transistor Logic Gates
IEEE Access
> 10.1109/ACCESS.2020.3001352
Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaN
Journal of Vacuum Science & Technology B
> 10.1116/1.5145198@jvb.2020.NAMBE2019.issue-1
Compact FeFET circuit building blocks for fast and efficient nonvolatile Logic-in-Memory
IEEE Journal of the Electron Devices Society
> 10.1109/JEDS.2020.2987084
Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors with Multiple Independent Inputs
IEEE Journal of the Electron Devices Society
> 10.1109/JEDS.2020.2986940
The Past, the Present, and the Future of Ferroelectric Memories
IEEE Transactions on Electron Devices
> 10.1109/TED.2020.2976148
Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures
Semiconductor Science and Technology
> 10.1088/1361-6641/ab8755
Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation
2019 Device Research Conference (DRC)
> 10.1109/DRC46940.2019.9046415
Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors
2019 Device Research Conference (DRC)
> 10.1109/DRC46940.2019.9046463
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories
2019 Device Research Conference (DRC)
> 10.1109/DRC46940.2019.9046455