The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals and conference proceedings in the past months. The digital object identifiers (DOI) and links to the papers are given below:
Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3230402
Hyper Dimensional Computing with Ferroelectric Tunneling Junctions
NANOARCH ’23
>10.1145/3611315.3633239
Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2
Advanced Functional Materials
>10.1002/adfm.202303636
The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors
Advanced Functional Materials
>10.1002/adfm.202303261
Dopant segregation effects on ohmic contact formation in nanoscale silicon
Solid-State Electronics
>10.1016/j.sse.2023.108739
Special Session: Mitigating Side-channel Attacks through Circuit to Application Layer Approaches
Proceedings – 2023 International Conference on Hardware/Software Codesign and System Synthesis, CODES+ISSS 2023
>10.1145/3607888.3608963
Reliability characterization of non-hysteretic charge amplification in MFIM device
Solid-State Electronics
>10.1016/j.sse.2023.108721
From Ferroelectric Material Optimization to Neuromorphic Devices
Advanced Materials
>10.1002/adma.202206042
Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching
Nano Letters
>10.1021/acs.nanolett.3c02351
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
APL materials
>10.1063/5.0148068
Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy
Journal of Vacuum Science & Technology A
>10.1116/6.0002652
Formal Analysis of Camouflaged Reconfigurable Circuits
2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198196
Cross-shape reconfigurable field effect transistor for flexible signal routing
Materials Today Electronics
>10.1016/j.mtelec.2023.100040
Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices
2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198128
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes
2023 Device Research Conference, DRC 2023
>10.1109/DRC58590.2023.10187018
Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell
Device Research Conference (DRC)
>10.1109/DRC58590.2023.10186934
Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition
Journal of Applied Physics
>10.1063/5.0147124
Focus issue on hafnium oxide based neuromorphic devices
Neuromorphic computing and engineering
>10.1088/2634-4386/acd80b
Toward Nonvolatile Spin-Orbit Devices
ACS Applied Materials and Interfaces
>10.1021/acsami.2c22205
Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2
Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300068
Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films
ACS Applied Electronic Materials
>10.1021/acsaelm.3c00117
Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors
Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300019
Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors
2023 Design, Automation and Test in Europe Conference and Exhibition, DATE 2023 – Proceedings
>10.23919/DATE56975.2023.10136918
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions
2023 35th International Conference on Microelectronic Test Structure (ICMTS)
>10.1109/ICMTS55420.2023.10094178
Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface
Nanotechnology
>10.1088/1361-6528/acad0a
Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors
Advanced Materials Interfaces
>10.1002/admi.202202151
Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N
ACS Applied Materials & Interfaces
>10.1021/acsami.2c18313
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions
Solid-state electronics
>10.1016/j.sse.2022.108569
Dependence of reverse leakage on the edge termination process in vertical GaN power device
Semiconductor science and technology
>10.1088/1361-6641/aca7da
Neuromorphic devices based on fluorite-structured ferroelectrics
Infomat
>10.1002/inf2.12380
Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing
ACS Applied Electronic Materials
>10.1021/acsaelm.2c01259
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3136981
The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2Capacitors
2022 International Electron Devices Meeting, IEDM 2022
>10.1109/IEDM45625.2022.10019554
Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers
Journal of Applied Physics
>10.1063/5.0119871
Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibility
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)
>10.1109/NMDC46933.2022.10052145
1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3129279
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
Nature Communications
>10.1038/s41467-022-34533-w
A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation
IEEE Transactions on Nanotechnology
>10.1109/TNANO.2022.3221836
An Analog Memristive and Memcapacitive Device for Neuromorphic Computing
2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
>10.1109/ICECS202256217.2022.9970915
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
2022 | Conference paper | Author2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
>10.1109/ICECS202256217.2022.9970799
END-TRUE: Emerging Nanotechnology-Based Double-Throughput True Random Number Generator
IFIP Advances in Information and Communication Technology ((IFIPAICT)
>10.1007/978-3-031-16818-5_9
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions
ESSDERC 2022 – IEEE 52nd European Solid-State Device Research Conference
>10.1109/ESSDERC55479.2022.9947185
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
ESSCIRC 2022 – IEEE 48th European Solid State Circuits Conference
>10.1109/ESSCIRC55480.2022.9911392
Versatile experimental setup for FTJ characterization
Solid-State Electronics
>10.1016/j.sse.2022.108364
Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)
2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)
>10.1109/FLEPS53764.2022.9781597
Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures
Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126788
Challenges in Electron Beam Lithography of Silicon Nanostructures
2022 IEEE 22nd International Conference on Nanotechnology, NANO 2022
>10.1109/nano54668.2022.9928629
Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2
IEEE Electron Device Letters
>10.1109/LED.2022.3189159
Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films
ACS Applied Electronic Materials
>10.1021/acsaelm.2c00608
Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs
Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126673
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
>10.1109/ISAF51494.2022.9870121
Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide
2022 Device Research Conference, DRC 2022
>10.1109/DRC55272.2022.9855802
Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VTDevices Fabrication for Hardware Security Applications
2022 Device Research Conference, DRC 2022
>10.1109/DRC55272.2022.9855805
Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling
IEEE journal of the Electron Devices Society
>10.1109/JEDS.2022.3187101
Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
>10.1109/EDTM53872.2022.9797943
Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI
IEEE Transactions on Device and Materials Reliability
>10.1109/TDMR.2022.3183630
SPICE Compact Model for an Analog Switching Niobium Oxide Memristor
International Conference on Modern Circuits and Systems Technologies 2022
>10.1109/MOCAST54814.2022.9837726
A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
2022 IEEE International Symposium on Circuits and Systems (ISCAS)
>10.1109/ISCAS48785.2022.9937555
Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2based ferroelectric capacitors on reliability performance
2022 IEEE International Memory Workshop (IMW)
>10.1109/IMW52921.2022.9779287
Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3171217
BEOL Integrated Ferroelectric HfO2based Capacitors for FeRAM
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
>10.1109/EDTM53872.2022.9798048
Ferroelectric-based synapses and neurons for neuromorphic computing
Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4918
Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates
IEEE Embedded Systems Letters
>10.1109/LES.2022.3144010
2022 roadmap on neuromorphic computing and engineering
Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4a83
Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films
Physica Status Solidi Rapid Research Letters
>10.1002/pssr.202100589
A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
Applied Physics Letters
>10.1063/5.0078106
Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence
IEEE IEDM 2021
>https://infoscience.epfl.ch/record/289768
Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology
2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
>10.1109/EuroSOI-ULIS53016.2021.9560180
Flash-Lamp Enabled Atomic Layer Deposition of Titanium Oxide
240th ECS Meeting
>bit.ly/3G5QuEN
The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films
Journal of Science: Advanced Materials and Devices
>10.1016/j.jsamd.2021.08.001
Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks
Semiconductor Science and Technology
>10.1088/1361-6641/ac1827
Back-Bias Reconfigurable Field Effect Transistor: A Flexible Add-On Functionality for 22 nm FDSOI
2021 Silicon Nanoelectronics Workshop (SNW)
>10.1109/SNW51795.2021.00005
20 Years of reconfigurable field-effect transistors: From concepts to future applications
Solid-State Electronics
>10.1016/j.sse.2021.108036
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
IEEE Transactions on Electron Devices
>10.1109/TED.2021.3081527
Ferroelectric Tunneling Junctions for Edge Computing
2021 IEEE International Symposium on Circuits and Systems (ISCAS)
>10.1109/ISCAS51556.2021.9401800
Adaptive Extreme Edge Computing for Wearable Devices
Frontiers in Neuroscience
>10.3389/fnins.2021.611300
Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors
2021 IEEE Latin America Electron Devices Conference (LAEDC)
>10.1109/LAEDC51812.2021.9437954
Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs
IEEE Transactions on Nanotechnology
>10.1109/TNANO.2021.3080455
Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices
ACS Applied Nano Materials
>10.1021/acsanm.0c03072
Reconfigurable thin-film transistors based on a parallel array of Si-nanowires
Journal of Applied Physics
>10.1063/5.0036029
Scalable fabrication of gold nanoparticles with adjustable size distribution as catalytic nuclei for the CVD growth of silicon nanowires
Applied Surface Science
>10.1016/j.apsusc.2019.144203
The Role of Balancing Nanostructured Silicon Anodes and NMC Cathodes in Lithium-Ion Full-Cells with High Volumetric Energy Density
Journal of The Electrochemical Society
>10.1149/1945-7111/ab68d7
Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films
Nano Energy
>10.1016/j.nanoen.2020.104733
Memory Technology – A Primer for Material Scientists
Reports on Progress in Physics
>10.1088/1361-6633/ab8f86
Review of Defect Chemistry in Fluorite-structure Ferroelectrics for future electronic devices
Journal of Materials Chemistry C
>10.1039/D0TC01695K
Analysis of Energy-Delay-Product for a 3D Vertical Nanowire FET Technology for Logic Applications
Size effect of electronic properties in highly arsenic-doped silicon nanowires
Solid-State Electronics
>10.1016/j.sse.2019.107724
A Silicon Nanowire Ferroelectric Field-Effect Transistor
Advanced Electronic Materials
>10.1002/aelm.201901244
Switching in Nanoscale Hafnium Oxide-Based Ferroelectric Transistors
Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131
FeFETs for Neuromorphic Systems
Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131.
>10.1007/978-981-15-1212-4_20
Surface related differences between uncoated versus carbon-coated silicon nanowire electrodes on performance in lithium ion batteries
Journal of Energy Storage
>10.1016/j.est.2019.101052
Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
Journal of Applied Physics
>10.1063/1.5128502
Hf xZr 1-xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison
Journal of Vacuum Science & Technology A
>10.1116/1.5134135
The Past, the Present, and the Future of Ferroelectric Memories
IEEE Transactions on Electron Devices
>10.1109/TED.2020.2976148
Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures
Semiconductor Science and Technology
>10.1088/1361-6641/ab8755
Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States
IEEE Electron Device Letters
> 10.1109/LED.2020.2997319
Reconfigurable frequency multiplication with a ferroelectric transistor
Nature Electronics
> 10.1038/s41928-020-0413-0
Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers
Solar Energy Materials and Solar Cells
> 10.1016/j.solmat.2020.110651
Quantitative Characterization of Reconfigurable Transistor Logic Gates
IEEE Access
> 10.1109/ACCESS.2020.3001352