The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals and conference proceedings in the past months. The digital object identifiers (DOI) and links to the papers are given below:

Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM

IEEE Journal of the Electron Devices Society

Hyper Dimensional Computing with Ferroelectric Tunneling Junctions


Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2

Advanced Functional Materials

The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors

Advanced Functional Materials

Dopant segregation effects on ohmic contact formation in nanoscale silicon

Solid-State Electronics

Special Session: Mitigating Side-channel Attacks through Circuit to Application Layer Approaches

Proceedings – 2023 International Conference on Hardware/Software Codesign and System Synthesis, CODES+ISSS 2023

Reliability characterization of non-hysteretic charge amplification in MFIM device

Solid-State Electronics

From Ferroelectric Material Optimization to Neuromorphic Devices

Advanced Materials

Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching

Nano Letters

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

APL materials

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Journal of Vacuum Science & Technology A

Cross-shape reconfigurable field effect transistor for flexible signal routing

Materials Today Electronics

Formal Analysis of Camouflaged Reconfigurable Circuits

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)

Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes

2023 Device Research Conference, DRC 2023

Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell

Device Research Conference (DRC)

Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

Journal of Applied Physics

Focus issue on hafnium oxide based neuromorphic devices

Neuromorphic computing and engineering

Toward Nonvolatile Spin-Orbit Devices

ACS Applied Materials and Interfaces

Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2

Physica Status Solidi (A) Applications and Materials Science

Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films

ACS Applied Electronic Materials

Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors

Physica Status Solidi (A) Applications and Materials Science

Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors

2023 Design, Automation and Test in Europe Conference and Exhibition, DATE 2023 – Proceedings

Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

2023 35th International Conference on Microelectronic Test Structure (ICMTS)

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface


Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Materials Interfaces

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N

ACS Applied Materials & Interfaces

Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions

Solid-state electronics

Dependence of reverse leakage on the edge termination process in vertical GaN power device

Semiconductor science and technology

Neuromorphic devices based on fluorite-structured ferroelectrics


Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

ACS Applied Electronic Materials

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

IEEE Journal of the Electron Devices Society

The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2Capacitors

2022 International Electron Devices Meeting, IEDM 2022

Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers

Journal of Applied Physics

Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibility

2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

IEEE Journal of the Electron Devices Society

Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

Nature Communications

A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation

IEEE Transactions on Nanotechnology

An Analog Memristive and Memcapacitive Device for Neuromorphic Computing

2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)

A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron

2022 | Conference paper | Author

2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)

END-TRUE: Emerging Nanotechnology-Based Double-Throughput True Random Number Generator

IFIP Advances in Information and Communication Technology ((IFIPAICT)

Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions

ESSDERC 2022 – IEEE 52nd European Solid-State Device Research Conference

Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing

ESSCIRC 2022 – IEEE 48th European Solid State Circuits Conference

Versatile experimental setup for FTJ characterization

Solid-State Electronics

Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures

Journal of Crystal Growth

Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)

2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)

Challenges in Electron Beam Lithography of Silicon Nanostructures

2022 IEEE 22nd International Conference on Nanotechnology, NANO 2022

Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2

IEEE Electron Device Letters

Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films

ACS Applied Electronic Materials

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of Crystal Growth

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF)

Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide

2022 Device Research Conference, DRC 2022

Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VTDevices Fabrication for Hardware Security Applications

2022 Device Research Conference, DRC 2022

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling

IEEE journal of the Electron Devices Society

Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays

6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI

IEEE Transactions on Device and Materials Reliability

SPICE Compact Model for an Analog Switching Niobium Oxide Memristor

International Conference on Modern Circuits and Systems Technologies 2022

A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices

2022 IEEE International Symposium on Circuits and Systems (ISCAS)

Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2based ferroelectric capacitors on reliability performance

2022 IEEE International Memory Workshop (IMW)

Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

IEEE Journal of the Electron Devices Society

BEOL Integrated Ferroelectric HfO2based Capacitors for FeRAM

6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Ferroelectric-based synapses and neurons for neuromorphic computing

Neuromorphic Computing and Engineering

Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

IEEE Embedded Systems Letters

2022 roadmap on neuromorphic computing and engineering

Neuromorphic Computing and Engineering

Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films

Physica Status Solidi Rapid Research Letters

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Applied Physics Letters

Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence


Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology

2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)

Flash-Lamp Enabled Atomic Layer Deposition of Titanium Oxide

240th ECS Meeting

The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

Journal of Science: Advanced Materials and Devices

Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks

Semiconductor Science and Technology

Back-Bias Reconfigurable Field Effect Transistor: A Flexible Add-On Functionality for 22 nm FDSOI

2021 Silicon Nanoelectronics Workshop (SNW)

20 Years of reconfigurable field-effect transistors: From concepts to future applications

Solid-State Electronics

On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

IEEE Transactions on Electron Devices

Ferroelectric Tunneling Junctions for Edge Computing

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

Adaptive Extreme Edge Computing for Wearable Devices

Frontiers in Neuroscience

Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors

2021 IEEE Latin America Electron Devices Conference (LAEDC)

Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs

IEEE Transactions on Nanotechnology

Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices

ACS Applied Nano Materials

Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

Journal of Applied Physics

Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films

Nano Energy

Memory Technology – A Primer for Material Scientists

Reports on Progress in Physics

Review of Defect Chemistry in Fluorite-structure Ferroelectrics for future electronic devices

Journal of Materials Chemistry C

Analysis of Energy-Delay-Product for a 3D Vertical Nanowire FET Technology for Logic Applications


Size effect of electronic properties in highly arsenic-doped silicon nanowires

Solid-State Electronics

A Silicon Nanowire Ferroelectric Field-Effect Transistor

Advanced Electronic Materials

Switching in Nanoscale Hafnium Oxide-Based Ferroelectric Transistors

Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131


FeFETs for Neuromorphic Systems

Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131.

Surface related differences between uncoated versus carbon-coated silicon nanowire electrodes on performance in lithium ion batteries

Journal of Energy Storage

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

Journal of Applied Physics

Hf xZr 1-xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison

Journal of Vacuum Science & Technology A

The Past, the Present, and the Future of Ferroelectric Memories

IEEE Transactions on Electron Devices

Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

Semiconductor Science and Technology

Scalable fabrication of gold nanoparticles with adjustable size distribution as catalytic nuclei for the CVD growth of silicon nanowires

Applied Surface Science

The Role of Balancing Nanostructured Silicon Anodes and NMC Cathodes in Lithium-Ion Full-Cells with High Volumetric Energy Density

Journal of The Electrochemical Society

Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States

IEEE Electron Device Letters
> 10.1109/LED.2020.2997319

Reconfigurable frequency multiplication with a ferroelectric transistor

Nature Electronics
> 10.1038/s41928-020-0413-0

Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers

Solar Energy Materials and Solar Cells
> 10.1016/j.solmat.2020.110651

Quantitative Characterization of Reconfigurable Transistor Logic Gates

IEEE Access
> 10.1109/ACCESS.2020.3001352

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