Publications

The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals and conference proceedings in the past months. The digital object identifiers (DOI) and links to the papers are given below:

Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)

2022 IEEE International Conference on Flexible and Printable Sensors and Systems
>10.1109/FLEPS53764.2022.9781597

Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures

Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126788

Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2

IEEE Electron Device Letters
>10.1109/LED.2022.3189159

Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films

ACS Applied Electronic Materials
>10.1021/acsaelm.2c00608

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126673

Reliability Study of 1T1C FeRAM Arrays with Hf0.5Zr0.5O2 Thickness Scaling

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3187101

Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI

IEEE Transactions on Device and Materials Reliability
>10.1109/TDMR.2022.3183630

Ferroelectric-based synapses and neurons for neuromorphic computing

Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4918

Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

IEEE Embedded Systems Letters
>10.1109/LES.2022.3144010

2022 roadmap on neuromorphic computing and engineering

Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4a83

Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films

Physica Status Solidi Rapid Research Letters
>10.1002/pssr.202100589

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Applied Physics Letters
>10.1063/5.0078106

Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence

IEEE IEDM 2021
>https://infoscience.epfl.ch/record/289768

Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology

2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
>10.1109/EuroSOI-ULIS53016.2021.9560180

Flash-Lamp Enabled Atomic Layer Deposition of Titanium Oxide

240th ECS Meeting
>bit.ly/3G5QuEN

Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks

Semiconductor Science and Technology
>10.1088/1361-6641/ac1827

The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

Journal of Science: Advanced Materials and Devices
>10.1016/j.jsamd.2021.08.001

Back-Bias Reconfigurable Field Effect Transistor: A Flexible Add-On Functionality for 22 nm FDSOI

2021 Silicon Nanoelectronics Workshop (SNW)
>10.1109/SNW51795.2021.00005

20 Years of reconfigurable field-effect transistors: From concepts to future applications

Solid-State Electronics
>10.1016/j.sse.2021.108036

On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

IEEE Transactions on Electron Devices
>10.1109/TED.2021.3081527

Ferroelectric Tunneling Junctions for Edge Computing

2021 IEEE International Symposium on Circuits and Systems (ISCAS)
>10.1109/ISCAS51556.2021.9401800

Adaptive Extreme Edge Computing for Wearable Devices

Frontiers in Neuroscience
>10.3389/fnins.2021.611300

Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors

2021 IEEE Latin America Electron Devices Conference (LAEDC)
>10.1109/LAEDC51812.2021.9437954

Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs

IEEE Transactions on Nanotechnology
>10.1109/TNANO.2021.3080455

Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices

ACS Applied Nano Materials
>10.1021/acsanm.0c03072

Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

Journal of Applied Physics
>10.1063/5.0036029

The Role of Balancing Nanostructured Silicon Anodes and NMC Cathodes in Lithium-Ion Full-Cells with High Volumetric Energy Density

Journal of The Electrochemical Society
>10.1149/1945-7111/ab68d7

Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films

Nano Energy
>10.1016/j.nanoen.2020.104733

Memory Technology – A Primer for Material Scientists

Reports on Progress in Physics
>10.1088/1361-6633/ab8f86

Review of Defect Chemistry in Fluorite-structure Ferroelectrics for future electronic devices

Journal of Materials Chemistry C
>10.1039/D0TC01695K

Analysis of Energy-Delay-Product for a 3D Vertical Nanowire FET Technology for Logic Applications


>hal-02732902

Size effect of electronic properties in highly arsenic-doped silicon nanowires

Solid-State Electronics
>10.1016/j.sse.2019.107724

A Silicon Nanowire Ferroelectric Field-Effect Transistor

Advanced Electronic Materials
>10.1002/aelm.201901244

Switching in Nanoscale Hafnium Oxide-Based Ferroelectric Transistors

Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131

>10.1007/978-981-15-1212-4_5

FeFETs for Neuromorphic Systems

Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131.
>10.1007/978-981-15-1212-4_20

Surface related differences between uncoated versus carbon-coated silicon nanowire electrodes on performance in lithium ion batteries

Journal of Energy Storage
>10.1016/j.est.2019.101052

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

Journal of Applied Physics
>10.1063/1.5128502

Hf xZr 1-xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison

Journal of Vacuum Science & Technology A
>10.1116/1.5134135

The Past, the Present, and the Future of Ferroelectric Memories

IEEE Transactions on Electron Devices
>10.1109/TED.2020.2976148

Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

Semiconductor Science and Technology
>10.1088/1361-6641/ab8755

Scalable fabrication of gold nanoparticles with adjustable size distribution as catalytic nuclei for the CVD growth of silicon nanowires

Applied Surface Science
>10.1016/j.apsusc.2019.144203

Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States

IEEE Electron Device Letters
> 10.1109/LED.2020.2997319

Reconfigurable frequency multiplication with a ferroelectric transistor

Nature Electronics
> 10.1038/s41928-020-0413-0

Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers

Solar Energy Materials and Solar Cells
> 10.1016/j.solmat.2020.110651

Quantitative Characterization of Reconfigurable Transistor Logic Gates

IEEE Access
> 10.1109/ACCESS.2020.3001352

Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaN

Journal of Vacuum Science & Technology B
> 10.1116/1.5145198@jvb.2020.NAMBE2019.issue-1

Compact FeFET circuit building blocks for fast and efficient nonvolatile Logic-in-Memory

IEEE Journal of the Electron Devices Society
> 10.1109/JEDS.2020.2987084

Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors with Multiple Independent Inputs

IEEE Journal of the Electron Devices Society
> 10.1109/JEDS.2020.2986940

The Past, the Present, and the Future of Ferroelectric Memories

IEEE Transactions on Electron Devices
> 10.1109/TED.2020.2976148

Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

Semiconductor Science and Technology
> 10.1088/1361-6641/ab8755

Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation

2019 Device Research Conference (DRC)
> 10.1109/DRC46940.2019.9046415

Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors

2019 Device Research Conference (DRC)
> 10.1109/DRC46940.2019.9046463

Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories

2019 Device Research Conference (DRC)
> 10.1109/DRC46940.2019.9046455


Publication Archive

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