The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals and conference proceedings in the past months. The digital object identifiers (DOI) and links to the papers are given below:
ZrO2 Based Multilayered Stacks with Al2O3, Y2O3 or La2O3 Interlayers for SiC Power Devices
Applied Materials & Interfaces
>10.1021/acsami.5c00947
Back-Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates
Advanced materials technologies
>10.1002/admt.202401391
Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI
Electron Device Letters
>10.1109/LED.2025.3549531
Ferroelectric Al1‐xScxN Opposite State Retention Model Based on Switching Dynamics
Advanced Functional Materials
>10.1002/adfm.202421793
Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor
Advanced electronic materials
>10.1002/aelm.202400789
Ferroelectric materials and their applications for next-generation integrated devices
International Electron Devices Meeting
>10.1109/IEDM50854.2024.10873588
Interaction Between Strain and Phase Formation in HfxZr1‐xO2 Thin Films
Charge trapping and endurance degradation in ferroelectric field-effect transistors
Non-Volatile Memory Technology Symposium
>10.1109/IEEECONF63530.2024.10830836
Roadmap for Schottky barrier transistors
Nano Futures
>10.1088/2399-1984/ad92d1
Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study
Physica Status Solidi (RRL)
>10.1002/pssr.202400307
Analyzing Carrier Density and Hall Mobility in Impurity‐Free Silicon Virtually Doped by External Defect Placement
Advanced Functional Materials
>10.1002/adfm.202415230
Small-Signal Characterization and Modelling of a Back Bias Reconfigurable Field Effect Transistor
IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719561
Speeding-Up Emerging Device Development Cycles by Generating Models via Machine-Learning directly from Electrical Measurements
IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719591
Understanding the impact of the dielectric layer in modulating the TER of FTJ devices
IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719445
Reliability of Reconfigurable Field Effect Transistors: Early Analysis of Bias Temperature Instability
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
>10.1109/IPFA61654.2024.10691045
Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses
ACS Applied Materials & Interfaces
>10.1021/acsami.4c10338
HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C
Symposium on VLSI Technology and Circuits
>10.1109/vlsitechnologyandcir46783.2024.10631328
Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping
Solid State Phenomena
>10.4028/p-yZ4Fux
Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors
ACS Applied Electronic Materials
>10.1021/acsaelm.4c01025
Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics
ACS Applied Materials & Interfaces
>10.1021/acsami.4c05798
On the thickness scaling of ferroelectric hafnia
IEEE Transactions on Materials for Electron Devices
>10.1109/TMAT.2024.3423665
Coincidence Detection with an Analog Spiking Neuron Exploiting Ferroelectric Polarization
International Symposium on Circuits and Systems
>10.1109/ISCAS58744.2024.10558196
Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2
ACS Applied Materials & Interfaces
>10.1021/acsami.4c06143
Dynamic Reconfigurable Security Cells Based on Emerging Devices Integrable in FDSOI Technology
Design, Automation and Test in Europe Conference and Exhibition
>10.23919/DATE58400.2024.10546894
Charge trapping challenges of CMOS embedded complementary FeFETs
International Memory Workshop
>10.1109/IMW59701.2024.10536957
Ferroelectric HfO2-based Capacitors for FeRAM
International Reliability Physics Symposium
>10.1109/IRPS48228.2024.10529299
Understanding the Substrate Effect on De-embedding Structures Fabricated on SOI Wafers Using Electromagnetic Simulation
International Conference on Microelectronic Test Structures
>10.1109/ICMTS59902.2024.10520694
Analysis and Compensation of the Series Resistance Effects on the Characteristics of Ferroelectric Capacitors
International Conference on Microelectronic Test Structures
>10.1109/ICMTS59902.2024.10520684
Demonstration of a Non-Volatile Antiferroelectric Pyroelectric Switch
International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers
https://ieeexplore.ieee.org/document/10517200
Voltage Programmable Pyroelectric Sensors With ZrO₂-Based Antiferroelectrics
IEEE Sensors Journal
>10.1109/JSEN.2024.3368772
Machine Learning-Based Compact Model Design for Reconfigurable FETs
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2024.3386113
The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors
IEEE Electron Device Letters
>10.1109/LED.2023.3347397
Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes
Advanced Electronic Materials
>10.1002/aelm.202300798
Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors
Advanced Science
>10.1002/advs.202308797
Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates
Advanced Electronic Materials
>10.1002/aelm.202300649
Degradation of Nonhysteretic Switching in HZO–Al2O3 Stacks Due to Positive Unipolar Stress
IEEE Transactions on Electron Devices
>10.1109/TED.2023.3344409
Insights Into Curie‐Temperature and Phase Formation of Ferroelectric Hf1−xZrxO2 with Oxygen Defects from a Leveled Energy Landscape
Advanced Materials Interfaces
>10.1002/admi.202300710
Smart Design of Fermi Level Pinning in HfO2‐Based Ferroelectric Memories
Advanced Functional Materials
>10.1002/adfm.202307120
Generating Predictive Models for Emerging Semiconductor Devices
Journal of the Electron Devices Society
> 10.1109/JEDS.2023.3347306
Generating Predictive Models for Emerging Semiconductor Devices
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2023.3347306
Hyper Dimensional Computing with Ferroelectric Tunneling Junctions
NANOARCH ’23
>10.1145/3611315.3633239
Dielectric Confined Nickel-Titanium Germano-Silicide Junctions to SiGe Nanochannels
Nanotechnology Materials and Devices Conference
> 10.1109/NMDC57951.2023.10343960
Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2
Advanced Functional Materials
>10.1002/adfm.202303636
The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors
Advanced Functional Materials
>10.1002/adfm.202303261
Dopant segregation effects on ohmic contact formation in nanoscale silicon
Solid-State Electronics
>10.1016/j.sse.2023.108739
Special Session: Mitigating Side-channel Attacks through Circuit to Application Layer Approaches
Proceedings – 2023 International Conference on Hardware/Software Codesign and System Synthesis, CODES+ISSS 2023
>10.1145/3607888.3608963
Reliability characterization of non-hysteretic charge amplification in MFIM device
Solid-State Electronics
>10.1016/j.sse.2023.108721
From Ferroelectric Material Optimization to Neuromorphic Devices
Advanced Materials
>10.1002/adma.202206042
Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching
Nano Letters
>10.1021/acs.nanolett.3c02351
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
APL materials
>10.1063/5.0148068
Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy
Journal of Vacuum Science & Technology A
>10.1116/6.0002652
Cross-shape reconfigurable field effect transistor for flexible signal routing
Materials Today Electronics
>10.1016/j.mtelec.2023.100040
Formal Analysis of Camouflaged Reconfigurable Circuits
2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198196
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes
2023 Device Research Conference, DRC 2023
>10.1109/DRC58590.2023.10187018
Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell
Device Research Conference (DRC)
>10.1109/DRC58590.2023.10186934
Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices
2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198128
Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition
Journal of Applied Physics
>10.1063/5.0147124
Focus issue on hafnium oxide based neuromorphic devices
Neuromorphic computing and engineering
>10.1088/2634-4386/acd80b
Toward Nonvolatile Spin-Orbit Devices
ACS Applied Materials and Interfaces
>10.1021/acsami.2c22205
Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2
Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300068
Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films
ACS Applied Electronic Materials
>10.1021/acsaelm.3c00117
Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors
Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300019
Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors
2023 Design, Automation and Test in Europe Conference and Exhibition, DATE 2023 – Proceedings
>10.23919/DATE56975.2023.10136918
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions
2023 35th International Conference on Microelectronic Test Structure (ICMTS)
>10.1109/ICMTS55420.2023.10094178
Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface
Nanotechnology
>10.1088/1361-6528/acad0a
Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors
Advanced Materials Interfaces
>10.1002/admi.202202151
Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N
ACS Applied Materials & Interfaces
>10.1021/acsami.2c18313
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions
Solid-state electronics
>10.1016/j.sse.2022.108569
Dependence of reverse leakage on the edge termination process in vertical GaN power device
Semiconductor science and technology
>10.1088/1361-6641/aca7da
Neuromorphic devices based on fluorite-structured ferroelectrics
Infomat
>10.1002/inf2.12380
Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing
ACS Applied Electronic Materials
>10.1021/acsaelm.2c01259
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3136981
Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3230402
The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2Capacitors
2022 International Electron Devices Meeting, IEDM 2022
>10.1109/IEDM45625.2022.10019554
Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers
Journal of Applied Physics
>10.1063/5.0119871
Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibility
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)
>10.1109/NMDC46933.2022.10052145
1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline
IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3129279
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
Nature Communications
>10.1038/s41467-022-34533-w
A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation
IEEE Transactions on Nanotechnology
>10.1109/TNANO.2022.3221836
An Analog Memristive and Memcapacitive Device for Neuromorphic Computing
2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
>10.1109/ICECS202256217.2022.9970915
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
2022 | Conference paper | Author2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
>10.1109/ICECS202256217.2022.9970799
END-TRUE: Emerging Nanotechnology-Based Double-Throughput True Random Number Generator
IFIP Advances in Information and Communication Technology ((IFIPAICT)
>10.1007/978-3-031-16818-5_9
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions
ESSDERC 2022 – IEEE 52nd European Solid-State Device Research Conference
>10.1109/ESSDERC55479.2022.9947185
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
ESSCIRC 2022 – IEEE 48th European Solid State Circuits Conference
>10.1109/ESSCIRC55480.2022.9911392
Versatile experimental setup for FTJ characterization
Solid-State Electronics
>10.1016/j.sse.2022.108364
Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures
Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126788
Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)
2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)
>10.1109/FLEPS53764.2022.9781597
Challenges in Electron Beam Lithography of Silicon Nanostructures
2022 IEEE 22nd International Conference on Nanotechnology, NANO 2022
>10.1109/nano54668.2022.9928629
Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2
IEEE Electron Device Letters
>10.1109/LED.2022.3189159
Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films
ACS Applied Electronic Materials
>10.1021/acsaelm.2c00608
Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs
Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126673
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
>10.1109/ISAF51494.2022.9870121
Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide
2022 Device Research Conference, DRC 2022
>10.1109/DRC55272.2022.9855802
Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VTDevices Fabrication for Hardware Security Applications
2022 Device Research Conference, DRC 2022
>10.1109/DRC55272.2022.9855805
Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling
IEEE journal of the Electron Devices Society
>10.1109/JEDS.2022.3187101
Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
>10.1109/EDTM53872.2022.9797943
Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI
IEEE Transactions on Device and Materials Reliability
>10.1109/TDMR.2022.3183630
SPICE Compact Model for an Analog Switching Niobium Oxide Memristor
International Conference on Modern Circuits and Systems Technologies 2022
>10.1109/MOCAST54814.2022.9837726
A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
2022 IEEE International Symposium on Circuits and Systems (ISCAS)
>10.1109/ISCAS48785.2022.9937555