The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals and conference proceedings in the past months. The digital object identifiers (DOI) and links to the papers are given below:

Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

Nature Communications

Versatile experimental setup for FTJ characterization

Solid-State Electronics

Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)

2022 IEEE International Conference on Flexible and Printable Sensors and Systems

Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures

Journal of Crystal Growth

Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2

IEEE Electron Device Letters

Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films

ACS Applied Electronic Materials

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of Crystal Growth

Reliability Study of 1T1C FeRAM Arrays with Hf0.5Zr0.5O2 Thickness Scaling

IEEE Journal of the Electron Devices Society

Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI

IEEE Transactions on Device and Materials Reliability

Ferroelectric-based synapses and neurons for neuromorphic computing

Neuromorphic Computing and Engineering

Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

IEEE Embedded Systems Letters

2022 roadmap on neuromorphic computing and engineering

Neuromorphic Computing and Engineering

Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films

Physica Status Solidi Rapid Research Letters

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Applied Physics Letters

Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence


Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology

2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)

Flash-Lamp Enabled Atomic Layer Deposition of Titanium Oxide

240th ECS Meeting

The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

Journal of Science: Advanced Materials and Devices

Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks

Semiconductor Science and Technology

Back-Bias Reconfigurable Field Effect Transistor: A Flexible Add-On Functionality for 22 nm FDSOI

2021 Silicon Nanoelectronics Workshop (SNW)

20 Years of reconfigurable field-effect transistors: From concepts to future applications

Solid-State Electronics

On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

IEEE Transactions on Electron Devices

Ferroelectric Tunneling Junctions for Edge Computing

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

Adaptive Extreme Edge Computing for Wearable Devices

Frontiers in Neuroscience

Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors

2021 IEEE Latin America Electron Devices Conference (LAEDC)

Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs

IEEE Transactions on Nanotechnology

Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices

ACS Applied Nano Materials

Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

Journal of Applied Physics

Switching in Nanoscale Hafnium Oxide-Based Ferroelectric Transistors

Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131


FeFETs for Neuromorphic Systems

Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131.

Surface related differences between uncoated versus carbon-coated silicon nanowire electrodes on performance in lithium ion batteries

Journal of Energy Storage

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

Journal of Applied Physics

Hf xZr 1-xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison

Journal of Vacuum Science & Technology A

The Past, the Present, and the Future of Ferroelectric Memories

IEEE Transactions on Electron Devices

Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

Semiconductor Science and Technology

Scalable fabrication of gold nanoparticles with adjustable size distribution as catalytic nuclei for the CVD growth of silicon nanowires

Applied Surface Science

The Role of Balancing Nanostructured Silicon Anodes and NMC Cathodes in Lithium-Ion Full-Cells with High Volumetric Energy Density

Journal of The Electrochemical Society

Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films

Nano Energy

Memory Technology – A Primer for Material Scientists

Reports on Progress in Physics

Review of Defect Chemistry in Fluorite-structure Ferroelectrics for future electronic devices

Journal of Materials Chemistry C

Analysis of Energy-Delay-Product for a 3D Vertical Nanowire FET Technology for Logic Applications


Size effect of electronic properties in highly arsenic-doped silicon nanowires

Solid-State Electronics

A Silicon Nanowire Ferroelectric Field-Effect Transistor

Advanced Electronic Materials

Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States

IEEE Electron Device Letters
> 10.1109/LED.2020.2997319

Reconfigurable frequency multiplication with a ferroelectric transistor

Nature Electronics
> 10.1038/s41928-020-0413-0

Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers

Solar Energy Materials and Solar Cells
> 10.1016/j.solmat.2020.110651

Quantitative Characterization of Reconfigurable Transistor Logic Gates

IEEE Access
> 10.1109/ACCESS.2020.3001352

Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaN

Journal of Vacuum Science & Technology B
> 10.1116/1.5145198@jvb.2020.NAMBE2019.issue-1

Compact FeFET circuit building blocks for fast and efficient nonvolatile Logic-in-Memory

IEEE Journal of the Electron Devices Society
> 10.1109/JEDS.2020.2987084

Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors with Multiple Independent Inputs

IEEE Journal of the Electron Devices Society
> 10.1109/JEDS.2020.2986940

The Past, the Present, and the Future of Ferroelectric Memories

IEEE Transactions on Electron Devices
> 10.1109/TED.2020.2976148

Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

Semiconductor Science and Technology
> 10.1088/1361-6641/ab8755

Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation

2019 Device Research Conference (DRC)
> 10.1109/DRC46940.2019.9046415

Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors

2019 Device Research Conference (DRC)
> 10.1109/DRC46940.2019.9046463

Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories

2019 Device Research Conference (DRC)
> 10.1109/DRC46940.2019.9046455

Publication Archive

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