Publications

The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals and conference proceedings in the past months. The digital object identifiers (DOI) and links to the papers are given below:

Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3230402

Hyper Dimensional Computing with Ferroelectric Tunneling Junctions

NANOARCH ’23
>10.1145/3611315.3633239

Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2

Advanced Functional Materials
>10.1002/adfm.202303636

The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors

Advanced Functional Materials
>10.1002/adfm.202303261

Dopant segregation effects on ohmic contact formation in nanoscale silicon

Solid-State Electronics
>10.1016/j.sse.2023.108739

Special Session: Mitigating Side-channel Attacks through Circuit to Application Layer Approaches

Proceedings – 2023 International Conference on Hardware/Software Codesign and System Synthesis, CODES+ISSS 2023
>10.1145/3607888.3608963

Reliability characterization of non-hysteretic charge amplification in MFIM device

Solid-State Electronics
>10.1016/j.sse.2023.108721

From Ferroelectric Material Optimization to Neuromorphic Devices

Advanced Materials
>10.1002/adma.202206042

Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching

Nano Letters
>10.1021/acs.nanolett.3c02351

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

APL materials
>10.1063/5.0148068

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Journal of Vacuum Science & Technology A
>10.1116/6.0002652

Formal Analysis of Camouflaged Reconfigurable Circuits

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198196

Cross-shape reconfigurable field effect transistor for flexible signal routing

Materials Today Electronics
>10.1016/j.mtelec.2023.100040

Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198128

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes

2023 Device Research Conference, DRC 2023
>10.1109/DRC58590.2023.10187018

Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell

Device Research Conference (DRC)
>10.1109/DRC58590.2023.10186934

Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

Journal of Applied Physics
>10.1063/5.0147124

Focus issue on hafnium oxide based neuromorphic devices

Neuromorphic computing and engineering
>10.1088/2634-4386/acd80b

Toward Nonvolatile Spin-Orbit Devices

ACS Applied Materials and Interfaces
>10.1021/acsami.2c22205

Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2

Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300068

Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films

ACS Applied Electronic Materials
>10.1021/acsaelm.3c00117

Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors

Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300019

Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors

2023 Design, Automation and Test in Europe Conference and Exhibition, DATE 2023 – Proceedings
>10.23919/DATE56975.2023.10136918

Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

2023 35th International Conference on Microelectronic Test Structure (ICMTS)
>10.1109/ICMTS55420.2023.10094178

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface

Nanotechnology
>10.1088/1361-6528/acad0a

Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Materials Interfaces
>10.1002/admi.202202151

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N

ACS Applied Materials & Interfaces
>10.1021/acsami.2c18313

Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions

Solid-state electronics
>10.1016/j.sse.2022.108569

Dependence of reverse leakage on the edge termination process in vertical GaN power device

Semiconductor science and technology
>10.1088/1361-6641/aca7da

Neuromorphic devices based on fluorite-structured ferroelectrics

Infomat
>10.1002/inf2.12380

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

ACS Applied Electronic Materials
>10.1021/acsaelm.2c01259

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3136981

The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2Capacitors

2022 International Electron Devices Meeting, IEDM 2022
>10.1109/IEDM45625.2022.10019554

Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers

Journal of Applied Physics
>10.1063/5.0119871

Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibility

2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)
>10.1109/NMDC46933.2022.10052145

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3129279

Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

Nature Communications
>10.1038/s41467-022-34533-w

A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation

IEEE Transactions on Nanotechnology
>10.1109/TNANO.2022.3221836

An Analog Memristive and Memcapacitive Device for Neuromorphic Computing

2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
>10.1109/ICECS202256217.2022.9970915

A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron

2022 | Conference paper | Author

2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
>10.1109/ICECS202256217.2022.9970799

END-TRUE: Emerging Nanotechnology-Based Double-Throughput True Random Number Generator

IFIP Advances in Information and Communication Technology ((IFIPAICT)
>10.1007/978-3-031-16818-5_9

Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing

ESSCIRC 2022 – IEEE 48th European Solid State Circuits Conference
>10.1109/ESSCIRC55480.2022.9911392

Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions

ESSDERC 2022 – IEEE 52nd European Solid-State Device Research Conference
>10.1109/ESSDERC55479.2022.9947185

Versatile experimental setup for FTJ characterization

Solid-State Electronics
>10.1016/j.sse.2022.108364

Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)

2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)
>10.1109/FLEPS53764.2022.9781597

Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures

Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126788

Challenges in Electron Beam Lithography of Silicon Nanostructures

2022 IEEE 22nd International Conference on Nanotechnology, NANO 2022
>10.1109/nano54668.2022.9928629

Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2

IEEE Electron Device Letters
>10.1109/LED.2022.3189159

Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films

ACS Applied Electronic Materials
>10.1021/acsaelm.2c00608

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126673

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
>10.1109/ISAF51494.2022.9870121

Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide

2022 Device Research Conference, DRC 2022
>10.1109/DRC55272.2022.9855802

Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VTDevices Fabrication for Hardware Security Applications

2022 Device Research Conference, DRC 2022
>10.1109/DRC55272.2022.9855805

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling

IEEE journal of the Electron Devices Society
>10.1109/JEDS.2022.3187101

Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays

6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
>10.1109/EDTM53872.2022.9797943

Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI

IEEE Transactions on Device and Materials Reliability
>10.1109/TDMR.2022.3183630

SPICE Compact Model for an Analog Switching Niobium Oxide Memristor

International Conference on Modern Circuits and Systems Technologies 2022
>10.1109/MOCAST54814.2022.9837726

A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices

2022 IEEE International Symposium on Circuits and Systems (ISCAS)
>10.1109/ISCAS48785.2022.9937555

Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2based ferroelectric capacitors on reliability performance

2022 IEEE International Memory Workshop (IMW)
>10.1109/IMW52921.2022.9779287

Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3171217

BEOL Integrated Ferroelectric HfO2based Capacitors for FeRAM

6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
>10.1109/EDTM53872.2022.9798048

Ferroelectric-based synapses and neurons for neuromorphic computing

Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4918

Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

IEEE Embedded Systems Letters
>10.1109/LES.2022.3144010

2022 roadmap on neuromorphic computing and engineering

Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4a83

Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films

Physica Status Solidi Rapid Research Letters
>10.1002/pssr.202100589

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Applied Physics Letters
>10.1063/5.0078106

Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence

IEEE IEDM 2021
>https://infoscience.epfl.ch/record/289768

Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology

2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
>10.1109/EuroSOI-ULIS53016.2021.9560180

Flash-Lamp Enabled Atomic Layer Deposition of Titanium Oxide

240th ECS Meeting
>bit.ly/3G5QuEN

The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

Journal of Science: Advanced Materials and Devices
>10.1016/j.jsamd.2021.08.001

Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks

Semiconductor Science and Technology
>10.1088/1361-6641/ac1827

Back-Bias Reconfigurable Field Effect Transistor: A Flexible Add-On Functionality for 22 nm FDSOI

2021 Silicon Nanoelectronics Workshop (SNW)
>10.1109/SNW51795.2021.00005

20 Years of reconfigurable field-effect transistors: From concepts to future applications

Solid-State Electronics
>10.1016/j.sse.2021.108036

On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

IEEE Transactions on Electron Devices
>10.1109/TED.2021.3081527

Ferroelectric Tunneling Junctions for Edge Computing

2021 IEEE International Symposium on Circuits and Systems (ISCAS)
>10.1109/ISCAS51556.2021.9401800

Adaptive Extreme Edge Computing for Wearable Devices

Frontiers in Neuroscience
>10.3389/fnins.2021.611300

Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors

2021 IEEE Latin America Electron Devices Conference (LAEDC)
>10.1109/LAEDC51812.2021.9437954

Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs

IEEE Transactions on Nanotechnology
>10.1109/TNANO.2021.3080455

Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices

ACS Applied Nano Materials
>10.1021/acsanm.0c03072

Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

Journal of Applied Physics
>10.1063/5.0036029

Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

Semiconductor Science and Technology
>10.1088/1361-6641/ab8755

Scalable fabrication of gold nanoparticles with adjustable size distribution as catalytic nuclei for the CVD growth of silicon nanowires

Applied Surface Science
>10.1016/j.apsusc.2019.144203

The Role of Balancing Nanostructured Silicon Anodes and NMC Cathodes in Lithium-Ion Full-Cells with High Volumetric Energy Density

Journal of The Electrochemical Society
>10.1149/1945-7111/ab68d7

Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films

Nano Energy
>10.1016/j.nanoen.2020.104733

Memory Technology – A Primer for Material Scientists

Reports on Progress in Physics
>10.1088/1361-6633/ab8f86

Review of Defect Chemistry in Fluorite-structure Ferroelectrics for future electronic devices

Journal of Materials Chemistry C
>10.1039/D0TC01695K

Analysis of Energy-Delay-Product for a 3D Vertical Nanowire FET Technology for Logic Applications


>hal-02732902

Size effect of electronic properties in highly arsenic-doped silicon nanowires

Solid-State Electronics
>10.1016/j.sse.2019.107724

A Silicon Nanowire Ferroelectric Field-Effect Transistor

Advanced Electronic Materials
>10.1002/aelm.201901244

Switching in Nanoscale Hafnium Oxide-Based Ferroelectric Transistors

Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131

>10.1007/978-981-15-1212-4_5

FeFETs for Neuromorphic Systems

Chapter in Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131.
>10.1007/978-981-15-1212-4_20

Surface related differences between uncoated versus carbon-coated silicon nanowire electrodes on performance in lithium ion batteries

Journal of Energy Storage
>10.1016/j.est.2019.101052

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

Journal of Applied Physics
>10.1063/1.5128502

Hf xZr 1-xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison

Journal of Vacuum Science & Technology A
>10.1116/1.5134135

The Past, the Present, and the Future of Ferroelectric Memories

IEEE Transactions on Electron Devices
>10.1109/TED.2020.2976148

Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States

IEEE Electron Device Letters
> 10.1109/LED.2020.2997319

Reconfigurable frequency multiplication with a ferroelectric transistor

Nature Electronics
> 10.1038/s41928-020-0413-0

Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers

Solar Energy Materials and Solar Cells
> 10.1016/j.solmat.2020.110651

Quantitative Characterization of Reconfigurable Transistor Logic Gates

IEEE Access
> 10.1109/ACCESS.2020.3001352


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