Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

Nature Communications

Versatile experimental setup for FTJ characterization

Solid-State Electronics

Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)

2022 IEEE International Conference on Flexible and Printable Sensors and Systems

Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures

Journal of Crystal Growth

Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2

IEEE Electron Device Letters

Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films

ACS Applied Electronic Materials

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of Crystal Growth

Reliability Study of 1T1C FeRAM Arrays with Hf0.5Zr0.5O2 Thickness Scaling

IEEE Journal of the Electron Devices Society

Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI

IEEE Transactions on Device and Materials Reliability

Ferroelectric-based synapses and neurons for neuromorphic computing

Neuromorphic Computing and Engineering

Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

IEEE Embedded Systems Letters

2022 roadmap on neuromorphic computing and engineering

Neuromorphic Computing and Engineering

Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films

Physica Status Solidi Rapid Research Letters