Schlagwort: 2022

Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

Nature Communications
>10.1038/s41467-022-34533-w

Versatile experimental setup for FTJ characterization

Solid-State Electronics
>10.1016/j.sse.2022.108364

Challenges and Perspectives for Energy-efficient Brain-inspired Edge Computing Applications (Invited Paper)

2022 IEEE International Conference on Flexible and Printable Sensors and Systems
>10.1109/FLEPS53764.2022.9781597

Wavelength-dependent Conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN Heterostructures

Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126788

Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO2

IEEE Electron Device Letters
>10.1109/LED.2022.3189159

Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films

ACS Applied Electronic Materials
>10.1021/acsaelm.2c00608

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of Crystal Growth
>10.1016/j.jcrysgro.2022.126673

Reliability Study of 1T1C FeRAM Arrays with Hf0.5Zr0.5O2 Thickness Scaling

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3187101

Implication of Self-heating effect on device reliability characterization of Multi-finger n-MOSFETs on 22FDSOI

IEEE Transactions on Device and Materials Reliability
>10.1109/TDMR.2022.3183630

Ferroelectric-based synapses and neurons for neuromorphic computing

Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4918

Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

IEEE Embedded Systems Letters
>10.1109/LES.2022.3144010

2022 roadmap on neuromorphic computing and engineering

Neuromorphic Computing and Engineering
>10.1088/2634-4386/ac4a83

Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Films

Physica Status Solidi Rapid Research Letters
>10.1002/pssr.202100589