Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3230402

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3136981

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3129279

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling

IEEE journal of the Electron Devices Society
>10.1109/JEDS.2022.3187101

Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3171217