Schlagwort: 2024

On the thickness scaling of ferroelectric hafnia

IEEE Transactions on Materials for Electron Devices
>10.1109/TMAT.2024.3423665

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2

ACS Applied Materials & Interfaces
>10.1021/acsami.4c06143

Voltage Programmable Pyroelectric Sensors With ZrO₂-Based Antiferroelectrics

IEEE Sensors Journal
>10.1109/JSEN.2024.3368772

Machine Learning-Based Compact Model Design for Reconfigurable FETs

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2024.3386113

The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors

IEEE Electron Device Letters
>10.1109/LED.2023.3347397

Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

Advanced Electronic Materials
>10.1002/aelm.202300798

Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors

Advanced Science
>10.1002/advs.202308797

Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates

Advanced Electronic Materials
>10.1002/aelm.202300649

Degradation of Nonhysteretic Switching in HZO–Al2O3 Stacks Due to Positive Unipolar Stress

IEEE Transactions on Electron Devices
>10.1109/TED.2023.3344409

Insights Into Curie‐Temperature and Phase Formation of Ferroelectric Hf1−xZrxO2 with Oxygen Defects from a Leveled Energy Landscape

Advanced Materials Interfaces
>10.1002/admi.202300710

Smart Design of Fermi Level Pinning in HfO2‐Based Ferroelectric Memories

Advanced Functional Materials
>10.1002/adfm.202307120