Schlagwort: 2023

Generating Predictive Models for Emerging Semiconductor Devices

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2023.3347306

Hyper Dimensional Computing with Ferroelectric Tunneling Junctions

NANOARCH ’23
>10.1145/3611315.3633239

Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2

Advanced Functional Materials
>10.1002/adfm.202303636

The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors

Advanced Functional Materials
>10.1002/adfm.202303261

Dopant segregation effects on ohmic contact formation in nanoscale silicon

Solid-State Electronics
>10.1016/j.sse.2023.108739

Special Session: Mitigating Side-channel Attacks through Circuit to Application Layer Approaches

Proceedings – 2023 International Conference on Hardware/Software Codesign and System Synthesis, CODES+ISSS 2023
>10.1145/3607888.3608963

Reliability characterization of non-hysteretic charge amplification in MFIM device

Solid-State Electronics
>10.1016/j.sse.2023.108721

From Ferroelectric Material Optimization to Neuromorphic Devices

Advanced Materials
>10.1002/adma.202206042

Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching

Nano Letters
>10.1021/acs.nanolett.3c02351

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

APL materials
>10.1063/5.0148068

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Journal of Vacuum Science & Technology A
>10.1116/6.0002652

Cross-shape reconfigurable field effect transistor for flexible signal routing

Materials Today Electronics
>10.1016/j.mtelec.2023.100040

Formal Analysis of Camouflaged Reconfigurable Circuits

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198196

Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198128

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes

2023 Device Research Conference, DRC 2023
>10.1109/DRC58590.2023.10187018

Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell

Device Research Conference (DRC)
>10.1109/DRC58590.2023.10186934

Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

Journal of Applied Physics
>10.1063/5.0147124

Focus issue on hafnium oxide based neuromorphic devices

Neuromorphic computing and engineering
>10.1088/2634-4386/acd80b

Toward Nonvolatile Spin-Orbit Devices

ACS Applied Materials and Interfaces
>10.1021/acsami.2c22205

Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2

Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300068

Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films

ACS Applied Electronic Materials
>10.1021/acsaelm.3c00117

Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors

Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300019

Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors

2023 Design, Automation and Test in Europe Conference and Exhibition, DATE 2023 – Proceedings
>10.23919/DATE56975.2023.10136918

Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

2023 35th International Conference on Microelectronic Test Structure (ICMTS)
>10.1109/ICMTS55420.2023.10094178

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface

Nanotechnology
>10.1088/1361-6528/acad0a

Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Materials Interfaces
>10.1002/admi.202202151

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N

ACS Applied Materials & Interfaces
>10.1021/acsami.2c18313

Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions

Solid-state electronics
>10.1016/j.sse.2022.108569

Dependence of reverse leakage on the edge termination process in vertical GaN power device

Semiconductor science and technology
>10.1088/1361-6641/aca7da

Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2022.3230402