Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM

IEEE Journal of the Electron Devices Society

Hyper Dimensional Computing with Ferroelectric Tunneling Junctions


Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2

Advanced Functional Materials

The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors

Advanced Functional Materials

Dopant segregation effects on ohmic contact formation in nanoscale silicon

Solid-State Electronics

Special Session: Mitigating Side-channel Attacks through Circuit to Application Layer Approaches

Proceedings – 2023 International Conference on Hardware/Software Codesign and System Synthesis, CODES+ISSS 2023

Reliability characterization of non-hysteretic charge amplification in MFIM device

Solid-State Electronics

From Ferroelectric Material Optimization to Neuromorphic Devices

Advanced Materials

Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching

Nano Letters

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

APL materials

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Journal of Vacuum Science & Technology A

Cross-shape reconfigurable field effect transistor for flexible signal routing

Materials Today Electronics

Formal Analysis of Camouflaged Reconfigurable Circuits

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)

Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes

2023 Device Research Conference, DRC 2023

Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell

Device Research Conference (DRC)

Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

Journal of Applied Physics

Focus issue on hafnium oxide based neuromorphic devices

Neuromorphic computing and engineering

Toward Nonvolatile Spin-Orbit Devices

ACS Applied Materials and Interfaces

Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2

Physica Status Solidi (A) Applications and Materials Science

Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films

ACS Applied Electronic Materials

Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors

Physica Status Solidi (A) Applications and Materials Science

Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors

2023 Design, Automation and Test in Europe Conference and Exhibition, DATE 2023 – Proceedings

Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

2023 35th International Conference on Microelectronic Test Structure (ICMTS)

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface


Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Materials Interfaces

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N

ACS Applied Materials & Interfaces

Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions

Solid-state electronics

Dependence of reverse leakage on the edge termination process in vertical GaN power device

Semiconductor science and technology