Schlagwort: 2024

Roadmap for Schottky barrier transistors

Nano Futures
>10.1088/2399-1984/ad92d1

Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study

Physica Status Solidi (RRL)
>10.1002/pssr.202400307

Analyzing Carrier Density and Hall Mobility in Impurity‐Free Silicon Virtually Doped by External Defect Placement

Advanced Functional Materials
>10.1002/adfm.202415230

Small-Signal Characterization and Modelling of a Back Bias Reconfigurable Field Effect Transistor

 IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719561

Speeding-Up Emerging Device Development Cycles by Generating Models via Machine-Learning directly from Electrical Measurements

IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719591

Understanding the impact of the dielectric layer in modulating the TER of FTJ devices

 IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719445

Reliability of Reconfigurable Field Effect Transistors: Early Analysis of Bias Temperature Instability

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
>10.1109/IPFA61654.2024.10691045

Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses

ACS Applied Materials & Interfaces
>10.1021/acsami.4c10338

HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C

Symposium on VLSI Technology and Circuits
>10.1109/vlsitechnologyandcir46783.2024.10631328

Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping

Solid State Phenomena
>10.4028/p-yZ4Fux

Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors

ACS Applied Electronic Materials
>10.1021/acsaelm.4c01025

Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics

ACS Applied Materials & Interfaces
>10.1021/acsami.4c05798

On the thickness scaling of ferroelectric hafnia

IEEE Transactions on Materials for Electron Devices
>10.1109/TMAT.2024.3423665

Coincidence Detection with an Analog Spiking Neuron Exploiting Ferroelectric Polarization

 International Symposium on Circuits and Systems
>10.1109/ISCAS58744.2024.10558196

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2

ACS Applied Materials & Interfaces
>10.1021/acsami.4c06143

Dynamic Reconfigurable Security Cells Based on Emerging Devices Integrable in FDSOI Technology

Design, Automation and Test in Europe Conference and Exhibition
>10.23919/DATE58400.2024.10546894

Charge trapping challenges of CMOS embedded complementary FeFETs

International Memory Workshop
>10.1109/IMW59701.2024.10536957

Ferroelectric HfO2-based Capacitors for FeRAM

International Reliability Physics Symposium
>10.1109/IRPS48228.2024.10529299

Understanding the Substrate Effect on De-embedding Structures Fabricated on SOI Wafers Using Electromagnetic Simulation

International Conference on Microelectronic Test Structures
>10.1109/ICMTS59902.2024.10520694

Analysis and Compensation of the Series Resistance Effects on the Characteristics of Ferroelectric Capacitors

International Conference on Microelectronic Test Structures
>10.1109/ICMTS59902.2024.10520684

Demonstration of a Non-Volatile Antiferroelectric Pyroelectric Switch

International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers
https://ieeexplore.ieee.org/document/10517200

  • Schlagwörter

Voltage Programmable Pyroelectric Sensors With ZrO₂-Based Antiferroelectrics

IEEE Sensors Journal
>10.1109/JSEN.2024.3368772

Machine Learning-Based Compact Model Design for Reconfigurable FETs

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2024.3386113

The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors

IEEE Electron Device Letters
>10.1109/LED.2023.3347397

Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

Advanced Electronic Materials
>10.1002/aelm.202300798

Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors

Advanced Science
>10.1002/advs.202308797

Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates

Advanced Electronic Materials
>10.1002/aelm.202300649

Degradation of Nonhysteretic Switching in HZO–Al2O3 Stacks Due to Positive Unipolar Stress

IEEE Transactions on Electron Devices
>10.1109/TED.2023.3344409

Insights Into Curie‐Temperature and Phase Formation of Ferroelectric Hf1−xZrxO2 with Oxygen Defects from a Leveled Energy Landscape

Advanced Materials Interfaces
>10.1002/admi.202300710

Smart Design of Fermi Level Pinning in HfO2‐Based Ferroelectric Memories

Advanced Functional Materials
>10.1002/adfm.202307120

Generating Predictive Models for Emerging Semiconductor Devices

 Journal of the Electron Devices Society
> 10.1109/JEDS.2023.3347306

Dielectric Confined Nickel-Titanium Germano-Silicide Junctions to SiGe Nanochannels

Nanotechnology Materials and Devices Conference
> 10.1109/NMDC57951.2023.10343960