Schlagwort: 2025

Impact of Bias temperature instability on reconfigurable field effect transistors and circuits

Microelectronic Engineering
10.1016/j.mee.2025.112374

  • Schlagwörter

Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects

ACS Applied Materials & Interfaces
>10.1021/acsami.5c11569

Comparative Study of Switching Dynamics in Ferroelectric-based Capacitors with Different Design Options

IEEE 37th International Conference on Microelectronic Test Structures (ICMTS)
10.1109/ICMTS63811.2025.11068911

Circuit Polymorphism Enabled by RFET Devices Processed on Industrial FDSOI

IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
10.1109/EDTM61175.2025.11040419

Recent Challenges in the Fabrication of Vertical Silicon Nanowire Transistors

IEEE Transactions on Nanotechnology
10.1109/TNANO.2025.3582023

Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current

2025 IEEE International Memory Workshop
10.1109/IMW61990.2025.11026930

Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction

ACS Applied Electronic Materials
>10.1021/acsaelm.5c00469

Multi-Partner Project: Smart Sensor Analog Front-Ends Powered by Emerging Reconfigurable Devices (SENSOTERIC)

IEEE Design, Automation & Test in Europe Conference (DATE)
>10.23919/DATE64628.2025.10992831

ZrO2 Based Multilayered Stacks with Al2O3, Y2O3 or La2O3 Interlayers for SiC Power Devices

Applied Materials & Interfaces
>10.1021/acsami.5c00947

Back-Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates

Advanced materials technologies
>10.1002/admt.202401391

Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI

Electron Device Letters
>10.1109/LED.2025.3549531

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor

Advanced electronic materials
>10.1002/aelm.202400789

Ferroelectric Al1‐xScxN Opposite State Retention Model Based on Switching Dynamics

Advanced Functional Materials
>10.1002/adfm.202421793

Ferroelectric Al1‐xScxN Opposite State Retention Model Based on Switching Dynamics

Advanced Functional Materials
> 10.1002/adfm.202421793

Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire Arrays

IEEE Journal of the Electron Devices Society
10.1109/JEDS.2025.3547860

Ferroelectric materials and their applications for next-generation integrated devices

International Electron Devices Meeting
>10.1109/IEDM50854.2024.10873588

Interaction Between Strain and Phase Formation in HfxZr1‐xO2 Thin Films

Small
>10.1002/smll.202408133

Charge trapping and endurance degradation in ferroelectric field-effect transistors

Non-Volatile Memory Technology Symposium
>10.1109/IEEECONF63530.2024.10830836