Schlagwort: 2025

ZrO2 Based Multilayered Stacks with Al2O3, Y2O3 or La2O3 Interlayers for SiC Power Devices

Applied Materials & Interfaces
>10.1021/acsami.5c00947

Back-Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates

Advanced materials technologies
>10.1002/admt.202401391

Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI

Electron Device Letters
>10.1109/LED.2025.3549531

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor

Advanced electronic materials
>10.1002/aelm.202400789

Ferroelectric Al1‐xScxN Opposite State Retention Model Based on Switching Dynamics

Advanced Functional Materials
>10.1002/adfm.202421793

Ferroelectric materials and their applications for next-generation integrated devices

International Electron Devices Meeting
>10.1109/IEDM50854.2024.10873588

Interaction Between Strain and Phase Formation in HfxZr1‐xO2 Thin Films

Small
>10.1002/smll.202408133

Charge trapping and endurance degradation in ferroelectric field-effect transistors

Non-Volatile Memory Technology Symposium
>10.1109/IEEECONF63530.2024.10830836