Schlagwort: 2025

Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded Security

IEEE Journal of the Electron Devices Society
10.1109/JEDS.2026.3654187

Design and Evaluation of an RFET Standard Cell Library Compatible with 22 nm FDSOI

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
10.1109/TCAD.2025.3649810

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials
10.1002/aelm.202500616

Impact of Bias temperature instability on reconfigurable field effect transistors and circuits

Microelectronic Engineering
10.1016/j.mee.2025.112374

  • Schlagwörter

Controlling the Wake-Up Mechanism and Switching Kinetics of Ferroelectric HfxZr1 – xO2 through Hf Content Modulation

ACS Applied Materials & Interfaces
10.1021/acsami.5c15572

Non-Volatile Inverter With 3D Cylindrical Metal-Ferroelectric-Metal Capacitor Realizing Digitized Voltage Output for Computing-In-Memory

European Solid-State Electronics Research Conference (ESSERC)
10.1109/ESSERC66193.2025.11213963

On the Unusual HCI Degradation of Nanoscale Back-Bias RFETs in 22nm FDSOI Technology

European Solid-State Electronics Research Conference (ESSERC)
10.1109/ESSERC66193.2025.11213944

Process Integration of U-Shape Ambipolar Schottky–Barrier Field-Effect Transistors

Advanced electronic materials
10.1002/aelm.202500310

Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy

Applied Physics Letters
10.1063/5.0288835

TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
10.1109/SISPAD66650.2025.11186366

Does a Morphotropic Phase Boundary Exist in ZrxHf1-xO2-Based Thin Films?

Advanced functional materials
10.1002/adfm.202522802

Modulation Acceptor-Doping as an Alternative to Classical P-Type Impurity Doping for Silicon

IEEE Transactions on Materials for Electron Devices
10.1109/TMAT.2025.3615888

Impact of Interfacial SiO2 Layer Thickness on the Electrical Performance of SiO2/High-k Stacks on 4H-SiC

Materials Science Forum
10.4028/p-MxQp6y

Book chapter

  • Schlagwörter

Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects

ACS Applied Materials & Interfaces
>10.1021/acsami.5c11569

NDR Effects in a Locally-Active Memristor Induce Small-Signal Amplification in a Simple Cell

International Conference on Modern Circuits and Systems Technologies (MOCAST)
10.1109/MOCAST65744.2025.11083728

Nucleation-limited-switching based compact models for Hf-based ferroelectric devices and their applications in memory arrays

International Conference on Modern Circuits and Systems Technologies (MOCAST)
10.1109/MOCAST65744.2025.11083922

Verilog-A look-up table model of a TIG-RFET compatible with 22 nm FDSOI design rules satisfying Gummel Symmetry

International Conference on Modern Circuits and Systems Technologies (MOCAST)
10.1109/MOCAST65744.2025.11083914

Model-Based Write Algorithm for Memristive Crossbar Arrays

International Conference on Modern Circuits and Systems Technologies (MOCAST)
10.1109/MOCAST65744.2025.11083963

Comparative Study of Switching Dynamics in Ferroelectric-based Capacitors with Different Design Options

IEEE 37th International Conference on Microelectronic Test Structures (ICMTS)
10.1109/ICMTS63811.2025.11068911

Circuit Polymorphism Enabled by RFET Devices Processed on Industrial FDSOI

IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
10.1109/EDTM61175.2025.11040419

Bi-Linearity of Back Gated Schottky Barrier Transistors on an Industrial 22nm FDSOI Platform for Efficient In-Hardware Matrix-Vector Multiplication and Addition

IEEE Interregional NEWCAS Conference
10.1109/NewCAS64648.2025.11107039

Recent Challenges in the Fabrication of Vertical Silicon Nanowire Transistors

IEEE Transactions on Nanotechnology
10.1109/TNANO.2025.3582023

Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current

2025 IEEE International Memory Workshop
10.1109/IMW61990.2025.11026930

Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction

ACS Applied Electronic Materials
>10.1021/acsaelm.5c00469

Multi-Partner Project: Smart Sensor Analog Front-Ends Powered by Emerging Reconfigurable Devices (SENSOTERIC)

IEEE Design, Automation & Test in Europe Conference (DATE)
>10.23919/DATE64628.2025.10992831

ZrO2 Based Multilayered Stacks with Al2O3, Y2O3 or La2O3 Interlayers for SiC Power Devices

Applied Materials & Interfaces
>10.1021/acsami.5c00947

Reconfigurable Ge Transistors Enabling Adaptive Differential Amplifiers

IEEE Transactions on Electron Devices
10.1109/TED.2025.3559912

Back-Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates

Advanced materials technologies
>10.1002/admt.202401391

Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI

Electron Device Letters
>10.1109/LED.2025.3549531

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor

Advanced electronic materials
>10.1002/aelm.202400789

Ferroelectric Al1‐xScxN Opposite State Retention Model Based on Switching Dynamics

Advanced Functional Materials
> 10.1002/adfm.202421793

Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire Arrays

IEEE Journal of the Electron Devices Society
10.1109/JEDS.2025.3547860

Ferroelectric materials and their applications for next-generation integrated devices

International Electron Devices Meeting
>10.1109/IEDM50854.2024.10873588

Interaction Between Strain and Phase Formation in HfxZr1‐xO2 Thin Films

Small
>10.1002/smll.202408133

Charge trapping and endurance degradation in ferroelectric field-effect transistors

Non-Volatile Memory Technology Symposium
>10.1109/IEEECONF63530.2024.10830836