Schlagwort: ACS Appl. Electron. Mater.

Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction

ACS Applied Electronic Materials
>10.1021/acsaelm.5c00469

Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors

ACS Applied Electronic Materials
>10.1021/acsaelm.4c01025

Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films

ACS Applied Electronic Materials
>10.1021/acsaelm.3c00117

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

ACS Applied Electronic Materials
>10.1021/acsaelm.2c01259

Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films

ACS Applied Electronic Materials
>10.1021/acsaelm.2c00608