Schlagwort: 2026

Impact of field stress pattern on the performance of HfO2-based ferroelectric tunnel junctions

Journal of Applied Physics
10.1063/5.0325206

Achieving a Dielectric Constant of 60 in ZrxHf1−xO2: A Candidate for DRAM?

2026 IEEE International Memory Workshop (IMW)
10.1109/IMW68301.2026.11532794

Diffusion of contact metals in GaN/AlGaN stacks

Journal of Applied Physics
10.1063/5.0316421

Impact of ALD Oxidant and Deposition Temperature on Electrical Characteristics of Al2O3/SiO2/SiC MOS-Capacitors

Materials Science Forum
10.4028/p-0EmUTi

A Compendium of Logic Gates Based on Reconfigurable Three-Independent-Gate Transistors Realized in FDSOI Hardware

Advanced electronic materials
10.1002/aelm.202500864

Short-term charge trapping effects in ferroelectric FETs

Solid-state electronics
10.1016/j.sse.2026.109332

Formation of a passivation layer via oxygen plasma oxidation for GaN-on-GaN regrowth

Thin Solid Films
10.1016/j.tsf.2026.140910

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced electronic materials
10.1002/aelm.202500777

A Compendium of Logic Gates Based on Reconfigurable Three-Independent-Gate Transistors Realized in FDSOI Hardware

Advanced electronic materials
10.1002/aelm.202500782

Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping

ACS Nano
10.1021/acsnano.5c17282

Exfoliated-MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced electronic materials
10.1002/aelm.202500691

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2-Based Memristors

Advanced electronic materials
10.1002/aelm.202500644