Schlagwort: 2026

A Low-Power 2-bit Full Adder realized with Three-Independent-Gate Reconfigurable FETs

2026 IEEE International Symposium on Circuits and Systems
10.1109/ISCAS66217.2026.11562307

Thickness-Defined Transport Regime Toward Near-Ideal Area-Type Switching

Advanced Materials
10.1002/adma.75393

  • Schlagwörter

Wire resistance impact and compensation methods in analog switching 1R memristive crossbar arrays

Solid-state electronics
10.1016/j.sse.2026.109381

  • Schlagwörter

Three Million Years Opposite State Data Retention in Partially Switched Wurtzite Ferroelectrics

Journal article
arXiv:2607.16665

  • Schlagwörter

How we discovered ferroelectricity in hafnium oxide thin films

Nature Electronics
10.1038/s41928-026-01693-2

  • Schlagwörter

Overcoming the thickness scaling limit in hafnium-based ferroelectrics via interfacial strain and conductivity engineering

Nano research
10.26599/NR.2026.94908815

  • Schlagwörter

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials
10.1002/adfm.77470

  • Schlagwörter

Gigahertz Cutoff Frequencies and High Gain in Graphene-Based Hot-Electron Transistor Enabled by Material Engineering

ACS Applied Materials and Interfaces
10.1021/acsami.6c04685

  • Schlagwörter

Three-Independent-Gate Reconfigurable Transistors in 22 nm FDSOI for in-Sensor Time-Domain Mixed-Signal Processing

2026 IEEE International Symposium on Circuits and Systems
10.1109/ISCAS66217.2026.11562063

Impact of field stress pattern on the performance of HfO2-based ferroelectric tunnel junctions

Journal of Applied Physics
10.1063/5.0325206

Achieving a Dielectric Constant of 60 in ZrxHf1−xO2: A Candidate for DRAM?

2026 IEEE International Memory Workshop (IMW)
10.1109/IMW68301.2026.11532794

Diffusion of contact metals in GaN/AlGaN stacks

Journal of Applied Physics
10.1063/5.0316421

Impact of ALD Oxidant and Deposition Temperature on Electrical Characteristics of Al2O3/SiO2/SiC MOS-Capacitors

Materials Science Forum
10.4028/p-0EmUTi

A Compendium of Logic Gates Based on Reconfigurable Three-Independent-Gate Transistors Realized in FDSOI Hardware

Advanced electronic materials
10.1002/aelm.202500864

Short-term charge trapping effects in ferroelectric FETs

Solid-state electronics
10.1016/j.sse.2026.109332

Formation of a passivation layer via oxygen plasma oxidation for GaN-on-GaN regrowth

Thin Solid Films
10.1016/j.tsf.2026.140910

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced electronic materials
10.1002/aelm.202500777

A Compendium of Logic Gates Based on Reconfigurable Three-Independent-Gate Transistors Realized in FDSOI Hardware

Advanced electronic materials
10.1002/aelm.202500782

Readout Current in HZO-Based Bilayer FTJs: Physical Mechanisms and Design Insight

IEEE Transactions on Electron Devices
10.1109/TED.2026.3671219

  • Schlagwörter

Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping

ACS Nano
10.1021/acsnano.5c17282

Exfoliated-MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced electronic materials
10.1002/aelm.202500691

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2-Based Memristors

Advanced electronic materials
10.1002/aelm.202500644