Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded Security

IEEE Journal of the Electron Devices Society
10.1109/JEDS.2026.3654187

Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire Arrays

IEEE Journal of the Electron Devices Society
10.1109/JEDS.2025.3547860