A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Applied Physics Letters
>10.1063/5.0078106

Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology

2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
>10.1109/EuroSOI-ULIS53016.2021.9560180

Flash-Lamp Enabled Atomic Layer Deposition of Titanium Oxide

240th ECS Meeting
>bit.ly/3G5QuEN

The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

Journal of Science: Advanced Materials and Devices
>10.1016/j.jsamd.2021.08.001

Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks

Semiconductor Science and Technology
>10.1088/1361-6641/ac1827

Back-Bias Reconfigurable Field Effect Transistor: A Flexible Add-On Functionality for 22 nm FDSOI

2021 Silicon Nanoelectronics Workshop (SNW)
>10.1109/SNW51795.2021.00005

Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

Journal of Applied Physics
>10.1063/5.0036029