New research from NaMLab has been published in peer-reviewed scientific journals.
The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals and conference proceedings in the past months. The digital object identifiers (DOI) and links to the papers are given below:
| Title | Journal | DOI |
|---|---|---|
| Reconfigurable frequency multiplication with a ferroelectric transistor | Nature Electronics | 10.1038/s41928-020-0413-0 |
| Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States | IEEE Electron Device Letters | 10.1109/LED.2020.2997319 |
| Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers | Solar Energy Materials and Solar Cells | 10.1016/j.solmat.2020.110651 |
| Quantitative Characterization of Reconfigurable Transistor Logic Gates | IEEE Access | 10.1109/ACCESS.2020.3001352 |
| Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaN | Journal of Vacuum Science & Technology B | 10.1116/1.5145198@jvb.2020.NAMBE2019.issue-1 |
| Compact FeFET circuit building blocks for fast and efficient nonvolatile Logic-in-Memory | IEEE Journal of the Electron Devices Society | 10.1109/JEDS.2020.2987084 |
| Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors with Multiple Independent Inputs | IEEE Journal of the Electron Devices Society | 10.1109/JEDS.2020.2986940 |
| The Past, the Present, and the Future of Ferroelectric Memories | IEEE Transactions on Electron Devices | 10.1109/TED.2020.2976148 |
| Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures | Semiconductor Science and Technology | 10.1088/1361-6641/ab8755 |
| Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors | 2019 Device Research Conference (DRC) | 10.1109/DRC46940.2019.9046463 |
| Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation | 2019 Device Research Conference (DRC) | 10.1109/DRC46940.2019.9046415 |
| Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories | 2019 Device Research Conference (DRC) | 10.1109/DRC46940.2019.9046455 |