Publications 2020 from NaMLab

New research from NaMLab has been published in peer-reviewed scientific journals.

The following research papers by NaMLab (co-) authors have been accepted for publication or have been already published in various peer-reviewed scientific journals and conference proceedings in the past months. The digital object identifiers (DOI) and links to the papers are given below:

Reconfigurable frequency multiplication with a ferroelectric transistorNature Electronics10.1038/s41928-020-0413-0
Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-StatesIEEE Electron Device Letters10.1109/LED.2020.2997319
Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayersSolar Energy Materials and Solar Cells10.1016/j.solmat.2020.110651
Quantitative Characterization of Reconfigurable Transistor Logic GatesIEEE Access10.1109/ACCESS.2020.3001352
Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaNJournal of Vacuum Science & Technology B10.1116/1.5145198@jvb.2020.NAMBE2019.issue-1
Compact FeFET circuit building blocks for fast and efficient nonvolatile Logic-in-MemoryIEEE Journal of the Electron Devices Society10.1109/JEDS.2020.2987084
Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors with Multiple Independent InputsIEEE Journal of the Electron Devices Society10.1109/JEDS.2020.2986940
The Past, the Present, and the Future of Ferroelectric MemoriesIEEE Transactions on Electron Devices10.1109/TED.2020.2976148
Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructuresSemiconductor Science and Technology10.1088/1361-6641/ab8755
Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors2019 Device Research Conference (DRC)10.1109/DRC46940.2019.9046463
Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation2019 Device Research Conference (DRC)10.1109/DRC46940.2019.9046415
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories2019 Device Research Conference (DRC)10.1109/DRC46940.2019.9046455