Publications

Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded Security

IEEE Journal of the Electron Devices Society
10.1109/JEDS.2026.3654187

Design and Evaluation of an RFET Standard Cell Library Compatible with 22 nm FDSOI

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
10.1109/TCAD.2025.3649810

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials
10.1002/aelm.202500616

Impact of Bias temperature instability on reconfigurable field effect transistors and circuits

Microelectronic Engineering
10.1016/j.mee.2025.112374

Controlling the Wake-Up Mechanism and Switching Kinetics of Ferroelectric HfxZr1 – xO2 through Hf Content Modulation

ACS Applied Materials & Interfaces
10.1021/acsami.5c15572

Non-Volatile Inverter With 3D Cylindrical Metal-Ferroelectric-Metal Capacitor Realizing Digitized Voltage Output for Computing-In-Memory

European Solid-State Electronics Research Conference (ESSERC)
10.1109/ESSERC66193.2025.11213963

On the Unusual HCI Degradation of Nanoscale Back-Bias RFETs in 22nm FDSOI Technology

European Solid-State Electronics Research Conference (ESSERC)
10.1109/ESSERC66193.2025.11213944

Process Integration of U-Shape Ambipolar Schottky–Barrier Field-Effect Transistors

Advanced electronic materials
10.1002/aelm.202500310

Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy

Applied Physics Letters
10.1063/5.0288835

TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
10.1109/SISPAD66650.2025.11186366

Does a Morphotropic Phase Boundary Exist in ZrxHf1-xO2-Based Thin Films?

Advanced functional materials
10.1002/adfm.202522802

Modulation Acceptor-Doping as an Alternative to Classical P-Type Impurity Doping for Silicon

IEEE Transactions on Materials for Electron Devices
10.1109/TMAT.2025.3615888

Impact of Interfacial SiO2 Layer Thickness on the Electrical Performance of SiO2/High-k Stacks on 4H-SiC

Materials Science Forum
10.4028/p-MxQp6y

Book chapter

Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects

ACS Applied Materials & Interfaces
>10.1021/acsami.5c11569

Verilog-A look-up table model of a TIG-RFET compatible with 22 nm FDSOI design rules satisfying Gummel Symmetry

International Conference on Modern Circuits and Systems Technologies (MOCAST)
10.1109/MOCAST65744.2025.11083914

Model-Based Write Algorithm for Memristive Crossbar Arrays

International Conference on Modern Circuits and Systems Technologies (MOCAST)
10.1109/MOCAST65744.2025.11083963

NDR Effects in a Locally-Active Memristor Induce Small-Signal Amplification in a Simple Cell

International Conference on Modern Circuits and Systems Technologies (MOCAST)
10.1109/MOCAST65744.2025.11083728

Nucleation-limited-switching based compact models for Hf-based ferroelectric devices and their applications in memory arrays

International Conference on Modern Circuits and Systems Technologies (MOCAST)
10.1109/MOCAST65744.2025.11083922

Comparative Study of Switching Dynamics in Ferroelectric-based Capacitors with Different Design Options

IEEE 37th International Conference on Microelectronic Test Structures (ICMTS)
10.1109/ICMTS63811.2025.11068911

Circuit Polymorphism Enabled by RFET Devices Processed on Industrial FDSOI

IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
10.1109/EDTM61175.2025.11040419

Bi-Linearity of Back Gated Schottky Barrier Transistors on an Industrial 22nm FDSOI Platform for Efficient In-Hardware Matrix-Vector Multiplication and Addition

IEEE Interregional NEWCAS Conference
10.1109/NewCAS64648.2025.11107039

Recent Challenges in the Fabrication of Vertical Silicon Nanowire Transistors

IEEE Transactions on Nanotechnology
10.1109/TNANO.2025.3582023

Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current

2025 IEEE International Memory Workshop
10.1109/IMW61990.2025.11026930

Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction

ACS Applied Electronic Materials
>10.1021/acsaelm.5c00469

Multi-Partner Project: Smart Sensor Analog Front-Ends Powered by Emerging Reconfigurable Devices (SENSOTERIC)

IEEE Design, Automation & Test in Europe Conference (DATE)
>10.23919/DATE64628.2025.10992831

ZrO2 Based Multilayered Stacks with Al2O3, Y2O3 or La2O3 Interlayers for SiC Power Devices

Applied Materials & Interfaces
>10.1021/acsami.5c00947

Reconfigurable Ge Transistors Enabling Adaptive Differential Amplifiers

IEEE Transactions on Electron Devices
10.1109/TED.2025.3559912

Back-Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates

Advanced materials technologies
>10.1002/admt.202401391

Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI

Electron Device Letters
>10.1109/LED.2025.3549531

Ferroelectric Al1‐xScxN Opposite State Retention Model Based on Switching Dynamics

Advanced Functional Materials
> 10.1002/adfm.202421793

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor

Advanced electronic materials
>10.1002/aelm.202400789

Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire Arrays

IEEE Journal of the Electron Devices Society
10.1109/JEDS.2025.3547860

Ferroelectric materials and their applications for next-generation integrated devices

International Electron Devices Meeting
>10.1109/IEDM50854.2024.10873588

Interaction Between Strain and Phase Formation in HfxZr1‐xO2 Thin Films

Small
>10.1002/smll.202408133

Charge trapping and endurance degradation in ferroelectric field-effect transistors

Non-Volatile Memory Technology Symposium
>10.1109/IEEECONF63530.2024.10830836

Roadmap for Schottky barrier transistors

Nano Futures
>10.1088/2399-1984/ad92d1

Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study

Physica Status Solidi (RRL)
>10.1002/pssr.202400307

Analyzing Carrier Density and Hall Mobility in Impurity‐Free Silicon Virtually Doped by External Defect Placement

Advanced Functional Materials
>10.1002/adfm.202415230

Small-Signal Characterization and Modelling of a Back Bias Reconfigurable Field Effect Transistor

 IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719561

Speeding-Up Emerging Device Development Cycles by Generating Models via Machine-Learning directly from Electrical Measurements

IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719591

Understanding the impact of the dielectric layer in modulating the TER of FTJ devices

 IEEE European Solid-State Electronics Research Conference
>10.1109/ESSERC62670.2024.10719445

Reliability of Reconfigurable Field Effect Transistors: Early Analysis of Bias Temperature Instability

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
>10.1109/IPFA61654.2024.10691045

Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses

ACS Applied Materials & Interfaces
>10.1021/acsami.4c10338

HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C

Symposium on VLSI Technology and Circuits
>10.1109/vlsitechnologyandcir46783.2024.10631328

Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping

Solid State Phenomena
>10.4028/p-yZ4Fux

Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors

ACS Applied Electronic Materials
>10.1021/acsaelm.4c01025

Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics

ACS Applied Materials & Interfaces
>10.1021/acsami.4c05798

On the thickness scaling of ferroelectric hafnia

IEEE Transactions on Materials for Electron Devices
>10.1109/TMAT.2024.3423665

Coincidence Detection with an Analog Spiking Neuron Exploiting Ferroelectric Polarization

 International Symposium on Circuits and Systems
>10.1109/ISCAS58744.2024.10558196

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2

ACS Applied Materials & Interfaces
>10.1021/acsami.4c06143

Dynamic Reconfigurable Security Cells Based on Emerging Devices Integrable in FDSOI Technology

Design, Automation and Test in Europe Conference and Exhibition
>10.23919/DATE58400.2024.10546894

Charge trapping challenges of CMOS embedded complementary FeFETs

International Memory Workshop
>10.1109/IMW59701.2024.10536957

Ferroelectric HfO2-based Capacitors for FeRAM

International Reliability Physics Symposium
>10.1109/IRPS48228.2024.10529299

Analysis and Compensation of the Series Resistance Effects on the Characteristics of Ferroelectric Capacitors

International Conference on Microelectronic Test Structures
>10.1109/ICMTS59902.2024.10520684

Understanding the Substrate Effect on De-embedding Structures Fabricated on SOI Wafers Using Electromagnetic Simulation

International Conference on Microelectronic Test Structures
>10.1109/ICMTS59902.2024.10520694

Demonstration of a Non-Volatile Antiferroelectric Pyroelectric Switch

International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers
https://ieeexplore.ieee.org/document/10517200

Voltage Programmable Pyroelectric Sensors With ZrO₂-Based Antiferroelectrics

IEEE Sensors Journal
>10.1109/JSEN.2024.3368772

Machine Learning-Based Compact Model Design for Reconfigurable FETs

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2024.3386113

The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors

IEEE Electron Device Letters
>10.1109/LED.2023.3347397

Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

Advanced Electronic Materials
>10.1002/aelm.202300798

Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors

Advanced Science
>10.1002/advs.202308797

Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates

Advanced Electronic Materials
>10.1002/aelm.202300649

Degradation of Nonhysteretic Switching in HZO–Al2O3 Stacks Due to Positive Unipolar Stress

IEEE Transactions on Electron Devices
>10.1109/TED.2023.3344409

Insights Into Curie‐Temperature and Phase Formation of Ferroelectric Hf1−xZrxO2 with Oxygen Defects from a Leveled Energy Landscape

Advanced Materials Interfaces
>10.1002/admi.202300710

Smart Design of Fermi Level Pinning in HfO2‐Based Ferroelectric Memories

Advanced Functional Materials
>10.1002/adfm.202307120

Generating Predictive Models for Emerging Semiconductor Devices

 Journal of the Electron Devices Society
> 10.1109/JEDS.2023.3347306

Generating Predictive Models for Emerging Semiconductor Devices

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2023.3347306

Hyper Dimensional Computing with Ferroelectric Tunneling Junctions

NANOARCH ’23
>10.1145/3611315.3633239

Dielectric Confined Nickel-Titanium Germano-Silicide Junctions to SiGe Nanochannels

Nanotechnology Materials and Devices Conference
> 10.1109/NMDC57951.2023.10343960

Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2

Advanced Functional Materials
>10.1002/adfm.202303636

The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors

Advanced Functional Materials
>10.1002/adfm.202303261

Dopant segregation effects on ohmic contact formation in nanoscale silicon

Solid-State Electronics
>10.1016/j.sse.2023.108739

Special Session: Mitigating Side-channel Attacks through Circuit to Application Layer Approaches

Proceedings – 2023 International Conference on Hardware/Software Codesign and System Synthesis, CODES+ISSS 2023
>10.1145/3607888.3608963

Reliability characterization of non-hysteretic charge amplification in MFIM device

Solid-State Electronics
>10.1016/j.sse.2023.108721

From Ferroelectric Material Optimization to Neuromorphic Devices

Advanced Materials
>10.1002/adma.202206042

Role of Defects in the Breakdown Phenomenon of Al1–xScxN: From Ferroelectric to Filamentary Resistive Switching

Nano Letters
>10.1021/acs.nanolett.3c02351

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

APL materials
>10.1063/5.0148068

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Journal of Vacuum Science & Technology A
>10.1116/6.0002652

Formal Analysis of Camouflaged Reconfigurable Circuits

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198196

Cross-shape reconfigurable field effect transistor for flexible signal routing

Materials Today Electronics
>10.1016/j.mtelec.2023.100040

Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices

2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
>10.1109/NEWCAS57931.2023.10198128

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes

2023 Device Research Conference, DRC 2023
>10.1109/DRC58590.2023.10187018

Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell

Device Research Conference (DRC)
>10.1109/DRC58590.2023.10186934

Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

Journal of Applied Physics
>10.1063/5.0147124

Focus issue on hafnium oxide based neuromorphic devices

Neuromorphic computing and engineering
>10.1088/2634-4386/acd80b

Toward Nonvolatile Spin-Orbit Devices

ACS Applied Materials and Interfaces
>10.1021/acsami.2c22205

Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2

Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300068

Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films

ACS Applied Electronic Materials
>10.1021/acsaelm.3c00117

Insights into the Temperature-Dependent Switching Behavior of Three-Gated Reconfigurable Field-Effect Transistors

Physica Status Solidi (A) Applications and Materials Science
>10.1002/pssa.202300019

Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors

2023 Design, Automation and Test in Europe Conference and Exhibition, DATE 2023 – Proceedings
>10.23919/DATE56975.2023.10136918

Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

2023 35th International Conference on Microelectronic Test Structure (ICMTS)
>10.1109/ICMTS55420.2023.10094178

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface

Nanotechnology
>10.1088/1361-6528/acad0a

Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Advanced Materials Interfaces
>10.1002/admi.202202151

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N

ACS Applied Materials & Interfaces
>10.1021/acsami.2c18313

Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions

Solid-state electronics
>10.1016/j.sse.2022.108569

Dependence of reverse leakage on the edge termination process in vertical GaN power device

Semiconductor science and technology
>10.1088/1361-6641/aca7da

Neuromorphic devices based on fluorite-structured ferroelectrics

Infomat
>10.1002/inf2.12380

Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing

ACS Applied Electronic Materials
>10.1021/acsaelm.2c01259

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

IEEE Journal of the Electron Devices Society
>10.1109/JEDS.2021.3136981