Nanowire based devices
Namlab is currently concentrating on the synthesis and integration of nanowires for new electronic applications. These include novel transistors, bio-sensors and reconfigurable circuits. The constantly shrinking dimensions of electronic devices and steadily growing performance targets make alternative materials and device approaches essential. In particular, nanowires made with “bottom-up” methods, are considered as potential candidates for future electronic applications. One of our specialties is the production of axial metal-semiconductor-metal hetero structures with atomically abrupt interfaces. They are the heart of the electronic devices & circuits investigated at NaMLab. We produce nanowire transistors in which the polarity can be altered from p-type to n-type by the application of external electrical fields.
Fig. 1: Targeted growth of single crystal silicon nanowires with
a mean diameter of 20 nm and a specific crystal orientation.
Fig. 2: Scanning electron microscope image of NiSi2/Si/NiSi2 longitudinal
nanowire heterostructure where the length of the active Si region
has been reduced down to approx. 7 nm by silicidation.
The electronic transport mechanisms of these hetero-junctions are studied and modeled to gain the required insight and to exploit their properties for building More than Moore electronic devices & circuits:
- Reprogrammable transistors in which the polarity can be dynamically switched from p-type to n-type by the application of external signals.
- Reconfigurable circuits that provide extended functionality.
- Highly sensitive bio-sensors, studied in a joint project with the Institute for Materials Science of the TU Dresden (Prof. Dr. G. Cuniberti).