NODE

Project
Nanowire-based One-Dimensional Electronics [Node]

Funding by European Commision | Contract number: IST015783 in FP6.

 

 

NODE, “Nanowire-based One-Dimensional Electronics”, an IST project funded by the European Commission currently is the largest program worldwide dedicated to the research in nanowires. NODE aims at an innovative bottom-up approach to fabrication and integration of nanoelectronic devices, based on self-assembling semiconductor nanowires. The primary target is to deliver replacement and add-on technologies to silicon CMOS, such as FET devices for logics and devices for memory applications. The partners are leading academic groups in nanowire research and semiconductor nanofabrication, research laboratories from major European electronics industries, companies specialized in nanowire device technology, as well as a major European Si-technology research centre.

In joint efforts with Qimonda, namlab focuses on the investigation of nanowire based memory cells as well as on high performance silicon-nanowire based field effect transistors. To this end, novel device architectures and processing schemes are being developed in close collaboration with the project partners. Namlab’s expertise in the synthesis of longitudinal metal to semiconductor NW heterostructures, bottom-up fabrication schemes, industrial know-how and electrical characterization offers an important contribution to the NODE project. Particular achievements include field effect transistors made of NiSi2/Si/NiSi2 longitudinal heterostructures (Fig. 1). Typical devices exhibit current densities of over 1 MA/cm2 at 1 V bias in the on-state and show an on-/off- current ratio exceeding 7 orders of magnitude, see Fig. 2. Single-crystalline metallic NiSi2 nanowires thinner than 20 nm diameter show a high thermal stability and breakdown current densities surpassing 200 MA/cm2.

Fig. 1. Left image shows a schematic view of a field effect transistors based on a NiSi2/Si/NiSi2 longitudinal nanowire heterostructure. Right image depicts a high resolution transmission electron microscope image of the NiSi2 nanowire with single-crystalline quality. From: W. M. Weber et al. Nano Lett. 6, p.2660 (2006).


Fig. 2. Subthreshold characteristic of a silicon nanowire transistor with a nanowire diameter of 23 nm, a gate length of 500 nm and gate oxide thickness of 20 nm.