Dielectrics for Nanoelectronic Devices
Materials with high dielectric constants (high k materials) play an increasingly important role in nanoelectrics integrated circuits for the next generation of complex applications. For conventional semiconductor capacitors, charge is stored in capacitors. In order to maintain the capacitance in capacitors that are continually being designed with smaller areas, the conventional dielectric layer (SiO2) has been reduced to a few atomic layers. To maintain the capacitance within these reduced capacitor areas at a constant value, it is necessary to introduce new dielectric materials with increased dielectric constants. KONDOR, MERLIN
Moreover, it is anticipated that every new technological generations may require custom dielectrics that maintain low leakage current through the ever decreasing dielectric layer thickness. This is especially true for the next generation of high performance transistor devices as well as processors and logic products. A variety of research projects in the nanoscale / femtoscale regime have been initiated in order to gain an understanding of the influence of material properties with respect to leakage mechanisms and breakthroughs. MegaEPOS (- also refer to Nanowires/ NODE).
All of these projects at Namlab are dealing with screening and characterization of candidate materials for new dielectrics applications. Performance, speed and reliability have been assessed and will remain in focus for the next projects we are currently preparing. In general, our efforts at Namlab aim at developing an in-depth understanding of the selection of suitable materials.