Publications
YEAR |
TITLE |
AUTHORS |
JOURNAL |
2010 |
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| 07.02.2010 | Carbon Junction Implant: Effect on Leakage Currents and Defect Distribution |
Guntrade Roll, Stefan Jakschik, Matthias Goldbach, Thomas Mikolajick, Lothar Frey |
IEEE Conf proc. ESSDERC (accepted) |
| 02.02.2010 | Modeling of leakage currents in high- dielectrics: Three-dimensional approach via kinetic Monte Carlo | Gunther Jegert, Alfred Kersch, Wenke Weinreich, Uwe Schröder, and Paolo Lugli | Appl. Phys. Lett. 96, 1 2010accepted |
2009 |
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| 06.11.2009 | Investigation of Zirconium Oxide Based High-k Dielectrics for Future Memory Applications | M. Grube, D. Martin, W. M. Weber, O. Bierwagen, L. Geelhaar, H. Riechert | IEEE Conf Proc. SCS 2009 |
| 06.10.2009 | Local charge trsnsport in nanoscale amorphous and crystalline regions of high-k (Zr02)0.8(Al2O3)0.2 thin fims | D. Martin, M. Grube, W. M. Weber, J. Ruestig, O. Bierwagen, L. Geelhaar and H. Riechert | Appl. Phys. Lett. 95, 142906 (2009) |
| 14.09.2009 | Gate Edge Optimization for LSTP High-k Metal Gate Technology | G. Roll, M. Goldbach,A.Wachowiak, S. Jakschick and L. Frey | IEEE Conf proc. ESSDERC |
2008 |
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| 18.08.2008 | Tuning the Polarity of Si-Nanowire Transistors Without the Use of Doping | W. M. Weber, L. Geelhaar, F. Kreupl H. Riechert, L. Lamagna, M. Fanciulli, G. Scarpa and P. Lugli. | IEEE conf. proc. Nanotechnology Nano´08 p. 580 - 581 (2008) |
| 09.01.2008 | Analysis of the hysteretic behavior of silicon nanowire transistors | Z. Fahem, G. Csaba, C.M. Erlen, P. Lugli, W.M. Weber, L. Geelhaar, H. Riechert | Phys. Stat. Sol. (c) 5, p. 27 (2008) |
2007 |
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| 08.11.2007 | Silicon to nickel-silicide axial nanowire heterostructures for high performance electronics | W.M. Weber, L. Geelhaar, E. Unger, C. Chèze, F. Kreupl, H. Riechert, P. Lugli | Phys. Stat. Sol. (b) 244, 4170 (2007) |
| 29.08.2007 | Axial and radial growth of Ni-induced GaN nanowires | L. Geelhaar, C. Chèze, W.M. Weber, R. Averbeck, H. Riechert, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas | Appl. Phys. Lett. 91, 093113 (2007) |
| 04.06.2007 | Leakage currents at crystallites in ZrAlxOy thin films measured by conductive atomic-force microscopy | O. Bierwagen, L. Geelhaar, X. Gay, M. Piešiņš, H. Riechert, B. Jobst, A. Rucki | Appl. Phys. Lett. 90, 23901 (2007) |
2006 |
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| 01.12.2006 | Silicon-nanowire transistors with intruded nickel-silicide contacts | W. M. Weber, L. Geelhaar, A. P. Graham, E. Unger, G. S. Duesberg, M. Liebau, W. Pamler, C. Cheze, H. Riechert, P. Lugli and F. Kreupl. | Nano Letters 6, p. 2660-2666 (2006) |
| 06.10.2006 |
Silicon nanowires: catalytic growth and electrical characterization |
W. M. Weber, G. S. Duesberg, A. P. Graham, M. Liebau, E. Unger, C. Cheze, L. Geelhaar, P. Lugli, H. Riechert and F. Kreupl. | Phys. Stat. Sol. (b) 243, p. 3340-3345 (2006) |
| 19.09.2006 | Non-linear gate length dependence of on-current in Si-Nanowire FETs | W. M. Weber, A. P. Graham, G. S. Duesberg, M. Liebau, C. Cheze, L. Geelhaar, E. Unger, W. Pamler, W. Hoenlein, H. Riechert, F. Kreupl, P. Lugli | IEEE 36th ESSDERC proc. p.423-426 (2006) |