Publications
TITLE |
AUTHORS |
JOURNAL |
2012 |
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| Flash Memories |
T. Mikolajick and V. Zhirnov | Advanced Electronic Materials and Novel Devices, R. Waser, ed., Darmstadt: Wiley-VCH Verlag GmbH & Co. KGaA, 2012, pp. 621–634 and 635-653 |
| Capacitor based Radom Access Memories | U. Schroeder, H. Schröder, A, Kingon, S. Summerfelt, C.S. Hwang, U. Böttger |
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| Semiconductor nanocrystals embedded in high-k materials | F. Benner, S. Haas, F. Schneider, V. Klemm, G. Schreiber, J. von Borany, and J. Heitmann | ECS Transactions, 2012, pp. 9–16 |
| Intrinsic MOSFET leakage of high-k peripheral DRAM devices: measurement and simulation | G. Roll | Proceeding of VLSI-TSA, Hsinchu, Taiwan: 2012 |
| Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2 | A.Martin, E. Yurchuk, S. Müller, J. Müller, J. Paul, J. Sundquist, S. Slesazeck, T. Schlösser, R. van Bentum, M. Trentzsch, U. Schröder, and T. Mikojajick, | Proceeding of 13th ULIS, 2012, pp. 195 –198 |
| HfO2-based ferroelectric field-effect transistors | E. Yurchuk | Proceeding of 4th IMW, Milano, Italy: 2012, pp. 217–220 |
| Influence of silicon content, annealing temperature and film thickness on the ferroelectric properties of HfO2 and its implication on highly scaled | J. Müller | Proceeding of IEEE Symposia on VLSI Technology and Circuits, Honolulu, USA: 2012 |
| Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films | H. Mähne, L. Berger, D. Martin, V. Klemm, S. Slesazeck, S. Jakschik, D. Rafaja, and T. Mikolajick | Solid-State Electronics, vol. 72, Jun. 2012, pp. 73–77 |
| Low-cost caesium phosphate as n-dopant for organic light-emitting diodes | J. H. Wemken, R. Krause, T. Mikolajick, and G. Schmid | Journal of Applied Physics, vol. 111, Apr. 2012, pp. 074502–074502–5 |
| Thermally activated crystallization of Nb2O5 grown on Pt electrode | L. Berger, H. Mähne, V. Klemm, A. Leuteritz, T. Mikolajick, and D. Rafaja | Applied Physics A: Materials Science & Processing, Mar. 2012, pp. 1–7 |
| Incipient ferroelectricity in Al‐doped HfO2 thin films | S. Müller, J. Müller, A. Singh, S. Riedel, J. Sundqvist, U. Schröder, and T. Mikolajick | Advanced Functional Materials, Mar. 2012 |
| Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films | D. Zhou, J. Müller, J. Xu, S. Knebel, D. Bräuhaus, and U. Schröder | Applied Physics Letters, vol. 100, Feb. 2012, pp. 082905 –082905–4 |
| Metal Oxide Memories Based on Thermochemical and Valence Change Mechanisms | J.J. Yang, I.H. Inoue, T. Mikolajick, and C.S. Hwang | MRS Bulletin, vol. 37, Feb. 2012, pp. 131–137 |
| Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO2 | J. Müller, T.S. Böscke, U. Schröder, R. Hoffmann, T. Mikolajick, and L. Frey, | Electron Device Letters, IEEE, vol. 33, Feb. 2012, pp. 185 –187 |
| Sub-microsecond polarization switching in Hf1-xSixO2 based metal-ferroelectric-insulator-silicon transistor | J. Müller, U. Schröder, T.S. Böschke, S. Jakschik, D. Bräuhaus, T. Mikolajick, and L. Frey | IEEE Electron Device Letters, vol. 33, 2012, pp. 185–187 |
2011 |
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| What’s after NAND? | F. Beug, T. Melde, T. Mikolajick, S. Slesazeck, J. Willer, and G. Wong | |
| Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors | T.S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, and U. Böttger | Proceeding of IEDM 2011, 2011, pp. 24.5.1 –24.5.4. |
| Optical characterization of three-dimensional structures within a DRAM capacitor | M. Krupinski, A. Kasic, T. Hecht, M. Klude, J. Heitmann, E. Erben, and T. Mikolajick | Proceeding of SPIE, 2011, p. 80823Y–80823Y–11 |
| Polarity behavior and adjustment in silicon nanowire Schottky junction transistors | W.M. Weber, A. Heinzig, and T. Mikolajick | ECS Transactions, 2011, pp. 93–101. 2011 |
| P1, P2 and P3 structuring of CIGSE solar cells with a single laser wavelength | A. Schultz | EU PVSEC Proceeding, Hamburg, Germany: 2011, pp. 2540 – 2543 |
| Surface conditioning of the TiO2 electrode in dye-sensitized solar cells | M. Knaut and I. Dirnstorfer | EU PVSEC Proceeding, Hamburg, Germany: 2011, pp. 576 – 579 |
| Dielectric backside passivation- improvements by dipole optimization | S. Jakschik | PVSEC Proceeding, Hamburg, Germany: 2011, pp. 2252 – 2255 |
| Scanning spreading resistance microscopy as a technique for silicon solar cell emitter structure characterization | S. Döring | EU PVSEC Proceeding, Hamburg, Germany: 2011, pp. 122–125 |
| Comparison of electrical properties of thin calcium titanate high-k insulators on RuO2, Pt and C electrodes | A. Krause, W.M. Weber, U. Schröder, A. Jahn, K. Richter, A. Graham, J. Heitmann, and T. Mikolajick | World Academy of Science, Engineering and Technology, 2011, pp. 986–987 |
| Ferroelectricity in yttrium-doped hafnium oxide | J. Müller, U. Schröder, T.S. Böscke, I. Müller, U. Böttger, L. Wilde, J. Sundquist, M. Lemberger, P. Kücher, T. Mikolajick, and L. Frey | Journal of Applied Physics, vol. 110, Dec. 2011, pp. 114113 –114113–5 |
| Reduction of leakage currents with nanocrystals embedded in an amorphous matrix in metal-insulator-metal capacitor stacks | A. Krause, W.M. Weber, U. Schröder, D. Pohl, B. Rellinghaus, J. Heitmann, and T. Mikolajick | Applied Physics Letters, vol. 99, Nov. 2011, pp. 222905–222905–3 |
| Direct probing of Schottky barriers in Si- Nanowire Schottky barrier field effect transistors | D. Martin, A. Heinzig, M. Grube, L. Geelhaar, T. Mikolajick, H. Riechert, and W.M. Weber | Physical Review Letters, vol. 107, Nov. 2011, p. 216807 |
| Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation | G. Roll, S. Jakschik, A. Burenkov, M. Goldbach, T. Mikolajick, and L. Frey | Solid-State Electronics, vol. 65–66, Nov. 2011, pp. 170–176 |
| Phase transitions in ferroelectric silicon doped hafnium oxide | T. S. Böscke, S. Teichert, D. Bräuhaus, J. Müller, U. Schröder, U. Böttger, and T. Mikolajick | Applied Physics Letters, vol. 99, Sep. 2011, pp. 112904–112904–3 |
| Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications | J. Müller, T.S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, J. Sundquist, P. Kücher, T. Mikolajick, and L. Frey | Applied Physics Letters, vol. 99, Sep. 2011, pp. 112901–112901–3 |
| Ferroelectricity in hafnium oxide thin films | T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, and U. Böttger | Applied Physics Letters, vol. 99, Sep. 2011, pp. 102903–102903–3 |
| Control of rectifying and resistive switching behavior in BiFeO3 thin films | Y. Shuai, S. Zhou, C. Wu, W. Zhang, D. Bürger, S. Slesazeck, T. Mikolajick, M. Helm, and H. Schmidt | Applied Physics Express, vol. 4, Aug. 2011, pp. 095802–095802–3 |
| Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications | D. Nozaki, J. Kunstmann, F. Zörgiebel, W.M. Weber, T. Mikolajick, and G. Cuniberti | Nanotechnology, vol. 22, Aug. 2011, p. 325703 |
| The influence of crystallinity on the resistive switching behavior of TiO2 | H. Mähne, S. Slesazeck, S. Jakschik, I. Dirnstorfer, and T. Mikolajick | Microelectronic Engineering, vol. 88, Jul. 2011, pp. 1148–1151 |
| Phase stabilization of sputtered strontium zirconate | M. Grube, D. Martin, W.M. Weber, T. Mikolajick, and H. Riechert | Microelectronic Engineering, vol. 88, Jul. 2011, pp. 1326–1329 |
| Influence of metal gate and capping film stress on TANOS cell performance | M. Czernohorsky, T. Melde, V. Beyer, M.F. Beug, J. Paul, R. Hoffmann, R. Knöfler, and A.T. Tilke | Microelectronic Engineering, vol. 88, Jul. 2011, pp. 1178–1181 |
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Reduced leakage current in BiFeO3 thin films with rectifying contacts
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Y. Shuai, S. Zhou, S. Streit, H. Reuther, D. Bürger, S. Slesazeck, T. Mikolajick, M. Helm, and H. Schmidt | Applied Physics Letters, vol. 98, Jun. 2011, pp. 232901–232901–3 |
| TaN and Al2O3 sidewall gate-etch damage influence on program, erase, and retention of sub-50-nm TANOS NAND flash memory cells | M.F. Beug, T. Melde, J. Paul, and R. Knöfler | Electron Devices, IEEE Transactions on Electron Devices, vol. 58, Jun. 2011, pp. 1728 –1734 |
| Synthesis of SrTiO3 by crystallization of SrO/TiO2 superlattices prepared by atomic layer deposition | S. Riedel, J. Neidhardt, S. Jansen, L. Wilde, J. Sundquist, E. Erben, S. Teichert, and A. Michaelis | Journal of Applied Physics, vol. 109, May. 2011, pp. 094101–094101–8 |
| Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO2 and TiN/Ru/HfTiO2 stacks | D. Martin, M. Grube, P. Reinig, L. Oberbeck, J. Heitmann, W.M. Weber, T. Mikolajick, and H. Riechert | Applied Physics Letters, vol. 98, Jan. 2011, pp. 012901–012901–3 |
| Evaluation of the electrical and physical properties of thin calcium titanate high-k insulators for capacitor applications | A. Krause, W. Weber, A. Jahn, K. Richter, D. Pohl, B. Rellinghaus, U. Schroder, J. Heitmann, and T. Mikolajick | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures, vol. 29, Jan. 2011, pp. 01AC07 –01AC07–5 |
| Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor | G. Roll, S. Jakschik, M. Goldbach, A. Wachowiak, T. Mikolajick, and L. Frey | Journal of Vacuum Science and Technology B, vol. 29, 2011, p. 01AA05 |
| Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures | D. Martin, M. Grube, W. Weinreich, J. Müller, L. Wilde, E. Erben, W.M. Weber, J. Heitmann, U. Schröder, T. Mikolajick, and H. Riechert | Journal of Vacuum Science & Technology B, vol. 29, 2011, p. 01AC02 |
| Reconfigurable silicon nanowire transistors | A. Heinzig, S. Slesazeck, F. Kreupl, T. Mikolajick, and W.M. Weber | Nano Letters, vol. 12, 2011, pp. 119–124 |
| Applicability of molecular beam deposition for the growth of high-k oxides | M. Grube, D. Martin, W.M. Weber, T. Mikolajick, O. Bierwagen, L. Geelhaar, and H. Riechert | Journal of Vacuum Science and Technology B, vol. 29, 2011, p. 01AC05 |
| Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO2 and TiN/Ru/HfTiO2 stacks. | D. Martin, M. Grube, P. Reinig, L. Oberbeck, J. Heitmann , W. M. Weber, T. Mikolajick and H. Riechert | Appl. Phys. Lett. 98, 012901 (2011) |
2010 |
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| An empirical model describing the MLC retention of charge trap flash memories | T. Melde, R. Hoffmann, E. Yurchuk, J. Paul, and T. Mikolajick | Integrated Reliability Workshop Final Report (IRW), 2010, pp. 118 –120 |
| Carbon junction implant: Effect on leakage currents and defect distribution | G. Roll, S. Jakschik, M. Goldbach, T. Mikolajick, and L. Frey | Proceeding of ESSDERC, 2010, pp. 329 –332 |
| Polarity controllable silicon nanowire Schottky barrier field effect transistors - a building block for reconfigurable systems | T. Mikolajick, A. Heinzig, and W.M. Weber | Proceedings of 8th Nanofair, 2010 |
| Silicon and nickel-silicide nanowires as an anode material for lithium batteries | S. Jakschik, W. Weber, A. Ispas, A. Bund, and T. Mikolajick, | Proceedings of 61th Annual Meeting of the Electrochemistry Society, 2010 |
| An investigation of the electrical properties of MIS capacitors with pyrolytic carbon electrodes | A. P. Graham, K. Richter, T. Jay, W. M. Weber, S. Knebel, U. Schröder and T. Mikolajick | Journal of Applied Physics, vol. 108, Nov. 2010, pp. 104508 –104508–4 |
| Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices | J. Paul, V. Beyer, M. Czernohorsky, M. F. Beug, K. Biedermann, M. Mildner, P. Michalowski, E. Schütze, T. Melde, S. Wege, R. Knöfler, and T. Mikolajick | Microelectronic Engineering (2010) 87, 5-8, 1629-1633 |
| SrTiO3 thin film capacitors on silicon substrates free from interfacial | S. Schmelzer, D. Bräuhaus, U. Böttger, S. Hoffmann-Eifert, P. Meuffels, R. Waser, P. Reinig L. Oberbeck, and U. Schroeder |
Applied Physics Letters 97, 132907 (2010) |
| An investigation of the electrical properties of pyrolytic carbon in reduced dimensions; vias and wires |
A. P. Graham, G. Schindler, G. S. Duesberg, T. Lutz and W. M. Weber | J. Appl. Phys. 107, 114316 (2010) |
| Direct Comparison of Catalyst-Free and Catalyst-induced GaN Nanowires | C. Chèze, L. Geelhaar, O. Brandt, W. M. Weber,H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G. P. Dimitrakopulos and T. Karakostas | Nano Research (3) 528 (2010) |
| Modeling of leakage currents in high- dielectrics: Three-dimensional approach via kinetic Monte Carlo | G. Jegert, A. Kersch, W. Weinreich, U. Schröder, and P. Lugli | Appl. Phys. Lett. 96, 1 2010accepted |
| Nanocrystalline Materials: Optimization of Thin Film Properties | J. Heitmann and T. Mikolajick | ECS Transactions 28(2) (2010) 451 - 460. |
| The influence of bottom oxide thickness on the extraction of the trap energy in SONOS structures | K. Bernert, Ch. Oestreich, J. Bollmann, and T. Mikolajick | Applied Physics A (2010) 100 249–255 |
2009 |
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| Nanocrystalline materials: Optimization of thin film properties | J. Heitmann and T. Mikolajick | ECS Transactions, 2010, pp. 451–460 |
| Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories | K. Seidel, R. Hoffmann, D.A. Lohr, T. Melde, M. Czernohorsky, J. Paul, M.F. Beug, and V. Beyer | Proceeding of 10th NVMTS, 2009, pp. 67 –71 |
| Local charge trsnsport in nanoscale amorphous and crystalline regions of high-k (Zr02)0.8(Al2O3)0.2 thin fims | D. Martin, M. Grube, W. M. Weber, J. Ruestig, O. Bierwagen, L. Geelhaar and H. Riechert | Appl. Phys. Lett. 95, 142906 (2009) |
2008 |
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| Tuning the Polarity of Si-Nanowire Transistors Without the Use of Doping | W.M. Weber, L. Geelhaar, L. Lamagna, M. Fanciulli, F. Kreupl, E. Unger, H. Riechert, G. Scarpa, and P. Lugli | Proceeding of 8th NANO, 2008, pp. 580 –581 |
| Analysis of the hysteretic behavior of silicon nanowire transistors | Z. Fahem, G. Csaba, C.M. Erlen, P. Lugli, W. M. Weber, L. Geelhaar, H. Riechert | Phys. Stat. Sol. (c) 5, p. 27 (2008) |
2007 |
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| Silicon to nickel-silicide axial nanowire heterostructures for high performance electronics | W. M. Weber, L. Geelhaar, E. Unger, C. Chèze, F. Kreupl, H. Riechert, P. Lugli | Phys. Stat. Sol. (b) 244, 4170 (2007) |
| Axial and radial growth of Ni-induced GaN nanowires | L. Geelhaar, C. Chèze, W. M. Weber, R. Averbeck, H. Riechert, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas | Appl. Phys. Lett. 91, 093113 (2007) |
| Leakage currents at crystallites in ZrAlxOy thin films measured by conductive atomic-force microscopy | O. Bierwagen, L. Geelhaar, X. Gay, M. Piešiņš, H. Riechert, B. Jobst, A. Rucki | Appl. Phys. Lett. 90, 23901 (2007) |
2006 |
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| Silicon-nanowire transistors with intruded nickel-silicide contacts | W. M. Weber, L. Geelhaar, A. P. Graham, E. Unger, G. S. Duesberg, M. Liebau, W. Pamler, C. Cheze, H. Riechert, P. Lugli and F. Kreupl. | Nano Letters 6, p. 2660-2666 (2006) |
| Silicon nanowires: catalytic growth and electrical characterization | W. M. Weber, G. S. Duesberg, A. P. Graham, M. Liebau, E. Unger, C. Cheze, L. Geelhaar, P. Lugli, H. Riechert and F. Kreupl. | Phys. Stat. Sol. (b) 243, p. 3340-3345 (2006) |
| Non-linear gate length dependence of on-current in Si-Nanowire FETs | W. M. Weber, A. P. Graham, G. S. Duesberg, M. Liebau, C. Cheze, L. Geelhaar, E. Unger, W. Pamler, W. Hoenlein, H. Riechert, F. Kreupl, P. Lugli | IEEE 36th ESSDERC proc. p.423-426 (2006) |