NaMLab gGmbH is a non-profit research organization and associated institute of the Technical University (TU) Dresden with focus on materials for electronic devices. Material development at NaMLab commonly proceeds under the constraints of the target electron device. The focus of the material development is therefore highly integration and application - driven.
Historically NaMLab was founded as a joint venture between Infineon Technologies AG memory products division (which later became Qimonda) and the Technical University Dresden. Therefore in the first years the research activities were focused on future high-k materials for capacitors in dynamic random access memories (DRAM) which was the main product of the industrial parent company. After the step-out of the industrial partner mid 2009 this key know-how was transformed to other devices and application fields. Today NaMLab employs these core competences to develop new device concepts in three central fields:
Re-Configurable Devices aim at electronic solutions beyond the possibilities of leading edge CMOS devices according to Moore´s Law. Re-programmable silicon-nanowire transistors, memristors and a new type of ferroelectric field-effect transistor based on doped hafnium oxide are the dominant topics in this field. In Energy Efficiency Devices NaMLab works at the frontier of research for solutions which reduce the power consumption of electronic devices and increase the overall energy conversion efficiency in entire electronic systems.
While the first topic includes a number of device-advancing activities in traditional CMOS processes, the second addresses specific dielectrics-based solutions for solar cells and GaN-based devices and systems. Besides the two focus device areas the fundament of this research, namely dielectric materials, is a key topic of its own. Here NaMLab either strives to advance the material properties themselves or is applying its know-how to non-electrical properties of the materials relevant for electron devices. The development of advanced diffusion barriers for organic electronic devices is a prime example. Additionally the measurement of electrical properties is a key competence needed in all topics.
In most of its research activities in GaN-based devices, solar cells and ferroelectric field effect transistors NaMLab is closely working together with industrial partners. Basic research is done in close co-operation with the Technical University Dresden and other research centers like Helmholtz Zentrum Dresden-Rossendorf (HZDR) and the Leibniz Institute for Solid State and Materials Research Dresden (IFW) to continuously generate new innovative ideas and approaches.
Prof. Dr.-Ing. Thomas Mikolajick
Nöthnitzer Str. 64
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