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At this years Internation Electron Devices Meeting (IEDM) in San Francisco (Dec 3-7, 2016), Namlab will co-author two presentations in the 'Charged Based Memory Session'.
For the first time, a direct measurement of negative capacitance in polycrystalline HfO2-based thin films is reported. Decreasing voltage with increasing charge transients are observed in 18 and 27 nm thin Gd:HfO2 capacitors in series with an external resistor.
NaMLab invites to the Novel High-k Application Workshop on March 9th and 10th, 2017. New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics will be discussed by more than 80 participants from industry, research institutes and universities.
The annual report can be download here.